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BD709晶体管资料
BD709别名：BD709三极管、BD709晶体管、BD709晶体三极管
BD709生产厂家：德国电子元件股份公司
BD709制作材料：Si-NPN
BD709性质：低频或音频放大 （LF）_功率放大 （L）
BD709封装形式：直插封装
BD709极限工作电压：80V
BD709最大电流允许值：12A
BD709最大工作频率：<1MHZ或未知
BD709引脚数：3
BD709最大耗散功率：75W
BD709放大倍数：
BD709图片代号：B-10
BD709vtest：80
BD709htest：999900
- BD709atest：12
BD709wtest：75
BD709代换 BD709用什么型号代替：BD545B,BD743B,BD809,3DD69C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD709 | Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS • Intented for use in power linear and switching applications. | ISC 无锡固电 |   | |
BD709 | silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package DESCRIPTION The BD705, BD707, BD709 and BD711 are silicon epitaxial-base NPN power transistors in Jedec TO- 220 plastic package intendedfor useInpower linear and switching applications. The complementary PNP types are the BD706, BD708, BD710 and BD712 respectively. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD709 | Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS • Intented for use in power linear and switching applications. | SAVANTIC | | |
BD709 | COMPLEMENTARY SILICON POWER TRANSISTORS POWER LINEAR AND SWITCHING APPLICATIONS | STMICROELECTRONICS 意法半导体 | | |
BD709 | NPN POWER TRANSISTORS POWER LINEAR AND SWITCHING APPLICATIONS | STMICROELECTRONICS 意法半导体 | | |
LOW-POWER AND LOW-OFFSET-VOLTAGE TINY SINGLE C-MOS OPERATIONAL AMPLIFIER 文件：286.9 Kbytes Page：9 Pages | NJRC 日本无线 | | ||
LOW-POWER AND LOW-OFFSET-VOLTAGE DUAL C-MOS OPERATIONAL AMPLIFIER? 文件：288.65 Kbytes Page：9 Pages | NJRC 日本无线 | | ||
LOW-POWER AND LOW-OFFSET-VOLTAGE DUAL C-MOS OPERATIONAL AMPLIFIER? 文件：288.65 Kbytes Page：9 Pages | NJRC 日本无线 | | ||
LOW-POWER AND LOW-OFFSET-VOLTAGE DUAL C-MOS OPERATIONAL AMPLIFIER? 文件：288.65 Kbytes Page：9 Pages | NJRC 日本无线 | | ||
LOW-POWER AND LOW-OFFSET-VOLTAGE DUAL C-MOS OPERATIONAL AMPLIFIER? 文件：288.65 Kbytes Page：9 Pages | NJRC 日本无线 | |
BD709产品属性
- 类型
描述
- 型号
BD709
- 功能描述
两极晶体管 - BJT NPN Power Switching
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
1404+ |
TO-220 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
25+ |
TO-220 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
24+ |
TO-220 |
10000 |
全新 |
||||
ST |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
PHI |
16+ |
TO-220 |
10000 |
全新原装现货 |
|||
stm |
25+ |
500000 |
行业低价,代理渠道 |
BD709规格书下载地址
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DdatasheetPDF页码索引
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