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BD650晶体管资料
BD650别名:BD650三极管、BD650晶体管、BD650晶体三极管
BD650生产厂家:德国AEG公司_德国西门子AG公司_德国凡尔伏公司
BD650制作材料:Si-P+Darl+Di
BD650性质:低频或音频放大 (LF)_功率放大 (L)
BD650封装形式:直插封装
BD650极限工作电压:100V
BD650最大电流允许值:8A
BD650最大工作频率:<1MHZ或未知
BD650引脚数:3
BD650最大耗散功率:62.5W
BD650放大倍数:
BD650图片代号:B-10
BD650vtest:100
BD650htest:999900
- BD650atest:8
BD650wtest:62.5
BD650代换 BD650用什么型号代替:BD702,BD902,BDW74C,BDX34C,BDX54C,FC50B,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BD650 | PNPSILICONPOWERDARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | POINNPower Innovations Ltd Power Innovations Ltd | ||
BD650 | PNPSILICONPOWERDARLINGTONS PNPSILICONPOWERDARLINGTONS •DesignedforComplementaryUsewithBD645,BD647,BD649ANDBD651 •62.5Wat25°CCaseTemperture •8AContinuousCollectorCurrent •MinimumhFEof750at3V,3A | TRSYS Transys Electronics | ||
BD650 | NPNSILICONDARLINGTONTRANSISTORS NPNSILICONDARLINGTONTRANSISTORS | SIEMENS Siemens Ltd | ||
BD650 | PNPSILICONDARLINGTONTRANSISTORS NPNSILICONDARLINGTONTRANSISTORS | SIEMENS Siemens Ltd | ||
BD650 | PNPSILICONPOWERDARLINGTONS PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A | BournsBourns Inc. 伯恩斯(邦士) | ||
BD650 | iscSiliconPNPDarlingtonPowerTransistor SiliconPNPDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) ·HighDCCurrentGain:hFE=750(Min)@IC=-3A ·LowSaturationVoltage ·ComplementtoTypeBD649 APPLICATIONS ·DesignedforuseascomplementaryAFpush-pull | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
BD650 | SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications | SAVANTIC Savantic, Inc. | ||
BD650 | SILICONDARLINGTONPOWERTRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647 | COMSET Comset Semiconductor | ||
BD650 | SiliconNPNPowerTransistors 文件:95.95 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | ||
BD650 | SILICONDARLINGTONPOWERTRANSISTORS 文件:111.79 Kbytes Page:5 Pages | COMSET Comset Semiconductor | ||
BD650 | SiliconPNPDarlingtonPowerTransistor 文件:125.1 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •F | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
6.0ASCHOTTKYBARRIERDIODE 文件:146.79 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:SURFACE MOUNT SCHOTTKY BARRIER R 分立半导体产品 二极管 - 整流器 - 阵列 | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
6.0ASCHOTTKYBARRIERDIODE 文件:147.04 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
iscSiliconPNPDarlingtonPowerTransistor 文件:279.43 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS PNP DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | BournsBourns Inc. 伯恩斯(邦士) | |||
LowProfile 文件:139.62 Kbytes Page:2 Pages | OSCILENT Oscilent Corporation | |||
PinPositionsNumberedonCoverwithIdentificationPolarizationNotch 文件:325.26 Kbytes Page:1 Pages | ARIES Aries Electronics,inc | |||
WaveguidetoCoaxialAdapter 文件:179.17 Kbytes Page:5 Pages | AACAmerican Accurate Components, Inc. 美国精密部件公司美国精密元件有限公司 | |||
WaveguidetoCoaxialAdapter 文件:179.17 Kbytes Page:5 Pages | AACAmerican Accurate Components, Inc. 美国精密部件公司美国精密元件有限公司 | |||
WaveguidetoCoaxialAdapter 文件:179.17 Kbytes Page:5 Pages | AACAmerican Accurate Components, Inc. 美国精密部件公司美国精密元件有限公司 |
BD650产品属性
- 类型
描述
- 型号
BD650
- 功能描述
达林顿晶体管 62.5W PNP Silicon
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
POWER |
23+ |
TO-220 |
25000 |
专做原装正品,假一罚百! |
|||
BOURNS/伯恩斯 |
24+ |
220 |
860000 |
明嘉莱只做原装正品现货 |
|||
23+ |
N/A |
64910 |
正品授权货源可靠 |
||||
ST |
22+ |
TO-220 |
25000 |
绝对全新原装现货 |
|||
POWER INNOVATIONS |
2023+ |
SMD |
20111 |
安罗世纪电子只做原装正品货 |
|||
BOURNS/伯恩斯 |
22+ |
220 |
8880 |
原装认准芯泽盛世! |
|||
PHI |
1738+ |
TO-220 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
P |
23+ |
TO-220 |
34 |
||||
ST/意法 |
23+ |
NA/ |
490 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
POWERINNOVAT |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
BD650规格书下载地址
BD650参数引脚图相关
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- bul128a
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- BD662
- BD661K
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- BD652F
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- BD6520F
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- BD651F
- BD6517F
- BD6516F
- BD6513F
- BD6512F
- BD6510F
- BD651
- BD650F
- BD650CT
- BD650CS
- BD649-S
- BD649F
- BD649
- BD648F
- BD648
- BD647F
- BD647
- BD646F
- BD646
- BD645F
- BD645CT
- BD645CS
- BD645
- BD644F
- BD644
- BD643F
- BD643
- BD6425
- BD640CT
- BD640CS
- BD638
- BD637
- BD636
- BD635
- BD634
- BD633
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2013-3-5
DdatasheetPDF页码索引
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