16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS(80 - 100 VOLTS 200 WATTS) NPN BD315, BD316 PNP BD317, BD318

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE= 25(Min.)@IC = 8A • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 8A • Complement to Type BD316 APPLICATIONS • Designed for high quality amplifiers operating up to 100 watts into 4 ohm load.

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS(80 - 100 VOLTS 200 WATTS)

Ultra Small Low Profile 0603 Balun 50廓 to 100廓 Balanced

文件：234.07 Kbytes Page：6 Pages

Ultra Small Low Profile 0603 Balun 50 to 100 Balanced

文件：3.29605 Mbytes Page：6 Pages

封装/外壳：0603（1608 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BALUN 3.1GHZ-5GHZ 50/100 0603 RF/IF，射频/中频和 RFID 巴伦转换器 ，平衡-不平衡转换器

Ultra Small Low Profile 0603 Balun 50廓 to 200廓 Balanced

文件：234.38 Kbytes Page：6 Pages

Ultra Low Profile 0404 Balun 50 to 100 Balanced

文件：307.09 Kbytes Page：6 Pages

封装/外壳：0404（1010 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BALUN 3.1GHZ-5GHZ 50/100 0404 RF/IF，射频/中频和 RFID 巴伦转换器 ，平衡-不平衡转换器

巴伦(balun)

平衡-不平衡转换器

Ultra Low Profile 0404 Balun 50廓 to 100廓 Balanced

文件：234.83 Kbytes Page：6 Pages

THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS

文件：124.85 Kbytes Page：3 Pages

THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS

文件：48.55 Kbytes Page：2 Pages

THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS

文件：90.33 Kbytes Page：2 Pages

THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS

文件：47.6 Kbytes Page：2 Pages

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 480 mV to 1050 mV • Total power dissipation: max. 350 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic

Silicon NPN Transistor, Medium Power Amp

Features: • AF – HF Medium Power Amplifier

10 mm Seven Segment Display

Description The TDS.31.. series are 10 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 6 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum