isc Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE= 40(Min)@ IC= 0.15A • Complement to Type BD227/229/231 APPLICATIONS • Designed for use in driver stages in television circuits.

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE= 40(Min)@ IC= 0.15A • Complement to Type BD227/229/231 APPLICATIONS • Designed for use in driver stages in television circuits.

Trans GP BJT NPN 60V 1.5A 3-Pin TO-126

Damper diode

Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

Silicon Mesa Rectifier

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuit 

Silicon NPN Transistor High Voltage Amp, Video Output

Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 350V (Min

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) For motor drives ■ Features • Small and lightweight • Low power consumption • Low voltage drive • With 4 elements incorporated