1ch High Side Switch ICs for USB Devices and Memory Cards

用于USB端口的单通道高端开关内置了一个在通用串行总线（USB）上使用的高端开关。电源开关部内置一个低导通电阻的N MOSFET电路。另外，内置过电流检测、过温度检测、低电压锁定、软启动功能。 ・内置一个低导通电阻(Typ = 80mΩ)Nch MOSFET\n・连续输出负载电流0.25A\n・软启动功能\n・过电流检测、限制电路\n・过温度检测电路\n・低电压锁定\n・开漏极外部通知端子\n・防止电源开关关断时的逆流\n・电源电压输入范围2.7V～5.5V\n・TTL Enable输入\n・输出上升时间 Typ 1.2ms\n・静态消耗电流 Max 10μA\n・工作温度范围-40℃～85℃;

0.5A Current Limit High Side Switch ICs

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1ch High Side Switch ICs for USB Devices and Memory Cards

文件：334.56 Kbytes Page：13 Pages

1ch Small Current Output USB High Side Switch ICs

文件：366.36 Kbytes Page：13 Pages

Silicon monolithic integrated circuit USB high side switch IC

文件：315.33 Kbytes Page：6 Pages

1ch Small Current Output USB High Side Switch ICs

文件：366.36 Kbytes Page：13 Pages

1ch High Side Switch ICs for USB Devices and Memory Cards

文件：334.56 Kbytes Page：13 Pages

0.5A Current Limit High Side Switch ICs

文件：1.18582 Mbytes Page：26 Pages

0.5A Current Limit High Side Switch ICs

文件：1.18582 Mbytes Page：26 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 SOP-J8 集成电路（IC） 配电开关，负载驱动器

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara