PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR

4 AMPERE POWER TRANSISTOR PNP SILICON 30,45,60 VOLTS 40 WATTS

Trans GP BJT PNP 80V 1A 3-Pin TO-225 Bulk

开关稳压器 DC/DC Converter VOUT=5V, Io=2A, 1ch

封装/外壳：16-UFBGA，CSPBGA 功能：升压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BOOST ADJ 2A UCSP50L1C 集成电路（IC） 稳压器 - DC-DC 开关稳压器

Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier

Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/c

Silicon Complementary Transistors Medium Power Audio Amplifier

Features: • 5W Output in Complementary Pair

OPAx186 Precision, Rail-to-Rail Input/Output, 24-V, Zero-Drift Operational Amplifiers

1 Features • High precision: – Offset drift: 0.01 μV/°C – Low offset voltage: 1 μV • Low quiescent current: 90 μA • Excellent dynamic performance: – Gain bandwidth: 750 kHz – Slew rate: 0.35 V/μs • Robust design: – RFI/EMI filtered inputs • Rail-to-rail input/output • Supply range: 4.5

Silicon PIN Photodiode

Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (λ p ≥ 900 nm). The large active area combined with a flat case gives a high sensitivity at

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE