PNP power transistor

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD131. FEATURES • High current (max. 3 A) • Low voltage (max. 45 V). APPLICATIONS • General purpose power applications.

SILICON EPITAXIAL POWER TRANSISTORS

SILICON EPITAXIAL POWER TRANSISTORS General Purpose Medium Power Applications

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 .

Silicon PNP Power Transistors

DESCRIPTION • Complement to type BD131 • With TO-126 package • High current (Max:- 3A) • Low voltage (Max: -45V) APPLICATIONS • For general purpose power applications

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 .

Silicon PNP Power Transistors

DESCRIPTION • Complement to type BD131 • With TO-126 package • High current (Max:- 3A) • Low voltage (Max: -45V) APPLICATIONS • For general purpose power applications

Silicon NPN Power Transistors

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Transistor

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

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Single Bipolar Transistor

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丝印代码：L2；Ground Sense Low Power General Purpose Operational Amplifiers

General Description BD1321G is a single low voltage operational amplifier with full swing output. It is the most effective solution for applications requiring low supply current consumption and low voltage operation. Features ■ Operable with Low Voltage ■ Input Ground Sense, Output Full Swing

低消耗 接地检测 运算放大器

BD1321G是可实现低电压工作的输出全振幅运算放大器。尤其具有低消耗电流、低偏压电流的特点，适用于便携式设备等。 · Operable with Low Voltage \n· Input Ground Sense, Output Full Swing \n· High Open Loop Voltage Gain \n· Low Supply Current \n· Low Input Offset Voltage;

丝印代码：L2；Ground Sense Low Power General Purpose Operational Amplifiers

General Description BD1321G is a single low voltage operational amplifier with full swing output. It is the most effective solution for applications requiring low supply current consumption and low voltage operation. Features ■ Operable with Low Voltage ■ Input Ground Sense, Output Full Swing

SILICON EPITAXIAL POWER TRANSISTORS

SILICON EPITAXIAL POWER TRANSISTORS General Purpose Medium Power Applications

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

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isc Silicon PNP Power Transistor

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General Purpose Operational Amplifiers

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General Purpose Operational Amplifiers

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General Purpose Operational Amplifiers

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POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava