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BCY58晶体管资料

  • BCY58(-7...-10)(A,B,C,D)别名:BCY58(-7...-10)(A,B,C,D)三极管、BCY58(-7...-10)(A,B,C,D)晶体管、BCY58(-7...-10)(A,B,C,D)晶体三极管

  • BCY58(-7...-10)(A,B,C,D)生产厂家:德国AEG公司_德国椤茨标准电器公司_意大利、德国Mis

  • BCY58(-7...-10)(A,B,C,D)制作材料:Si-NPN

  • BCY58(-7...-10)(A,B,C,D)性质:低频或音频放大 (LF)_开关管 (S)

  • BCY58(-7...-10)(A,B,C,D)封装形式:直插封装

  • BCY58(-7...-10)(A,B,C,D)极限工作电压:32V

  • BCY58(-7...-10)(A,B,C,D)最大电流允许值:0.2A

  • BCY58(-7...-10)(A,B,C,D)最大工作频率:250MHZ

  • BCY58(-7...-10)(A,B,C,D)引脚数:3

  • BCY58(-7...-10)(A,B,C,D)最大耗散功率:0.39W

  • BCY58(-7...-10)(A,B,C,D)放大倍数:β=630

  • BCY58(-7...-10)(A,B,C,D)图片代号:D-8

  • BCY58(-7...-10)(A,B,C,D)vtest:32

  • BCY58(-7...-10)(A,B,C,D)htest:250000000

  • BCY58(-7...-10)(A,B,C,D)atest:0.2

  • BCY58(-7...-10)(A,B,C,D)wtest:0.39

  • BCY58(-7...-10)(A,B,C,D)代换 BCY58(-7...-10)(A,B,C,D)用什么型号代替:BC107,BC171,BC183,BC207,BC237,BC382,BC547,BC582,BCX58,3DG130C,

型号 功能描述 生产厂家 企业 LOGO 操作
BCY58

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complements: BCY78 and BCY79. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification.

PHILIPS

飞利浦

BCY58

COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS

NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79

CDIL

BCY58

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS.

COMSET

BCY58

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

GENERAL DESCRIPTION The BCY 58 and BCY 59 are NPN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general purpose industrial applications.

MICRO-ELECTRONICS

BCY58

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complements: BCY78 and BCY79. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BCY58

npn silicon planar transistors

NPN Silicon Planar Transistors BCY58, BCY59, and BCY65 E are epitaxial NPN silicon planar transistors in TO 18 cases (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for AF input and driver stages as well as for switching appl

SIEMENS

西门子

BCY58

LOW NOISE AUDIO AMPLIFIERS

DESCRIPTION The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are intended for use in audio input stages, driver stages and low-noise input stages. The complementary PNP types are respectively the BCY78 and BCY79.

STMICROELECTRONICS

意法半导体

BCY58

npn silicon planar transistors

INFINEON

英飞凌

BCY58

Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.

文件:10.36 Kbytes Page:1 Pages

SEME-LAB

BCY58

SILICON PLANAR EPITAXIAL TRANSISTORS

文件:86.29 Kbytes Page:4 Pages

COMSET

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complements: BCY78 and BCY79. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification.

PHILIPS

飞利浦

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complements: BCY78 and BCY79. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification.

PHILIPS

飞利浦

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complements: BCY78 and BCY79. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification.

PHILIPS

飞利浦

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complements: BCY78 and BCY79. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification.

PHILIPS

飞利浦

SILICON PLANAR EPITAXIAL TRANSISTORS

文件:86.29 Kbytes Page:4 Pages

COMSET

Bipolar NPN Device in a Hermetically sealed TO18

文件:14.59 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed LCC1

文件:15.69 Kbytes Page:1 Pages

SEME-LAB

Bipolar Junction Transistors

TTELEC

Trans GP BJT NPN 32V 0.2A 3-Pin TO-18

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BCY58产品属性

  • 类型

    描述

  • Configuration:

    Single

  • Material:

    Si

  • Maximum Collector Base Voltage:

    32V

  • Maximum Collector Emitter Saturation Voltage:

    0.35@250uA@10mA

  • Maximum Collector Emitter Voltage:

    32V

  • Maximum DC Collector Current:

    0.2A

  • Maximum Emitter Base Voltage:

    7V

  • Maximum Operating Temperature:

    200°C

  • Maximum Power Dissipation:

    340mW

  • Maximum Transition Frequency:

    150(Min)MHz

  • Type:

    NPN

更新时间:2026-5-20 14:31:00
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