SURFACE MOUNT NPN SILICON TRANSISTOR

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High Collector Current

FEATURES ● High current (max. 1 A). ● Low voltage (max. 45 V).

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BCX51, BCX52 and BCX53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio and video amplifiers.

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 51 … BCX 53 (PNP)

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51...BCX53 (PNP)

45 V, 1 A NPN medium power transistors

NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)

Plastic-Encapsulate Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

NPN TRANSISTOR

VOLTAGE 45~80.0 Volts CURRENT 1.0 Ampers FEATURES ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • L

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according

45 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

45 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NPN Plastic-Encapsulate Transistors

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45 V, 1 A NPN medium power transistors

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中等功率双极型晶体管

45 V, 1 A NPN medium power transistors

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NPN Plastic-Encapsulate Transistors

文件：1.88778 Mbytes Page：5 Pages

45 V, 1 A NPN medium power transistors

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：290 Kbytes Page：2 Pages

45 V, 1 A NPN medium power transistors

45 V, 1 A NPN power bipolar transistors

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 45V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 45V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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200mW SMD Schottky Barrier Diode

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SURFACE MOUNT SCHOTTKY BARRIER

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SURFACE MOUNT SILICON SCHOTTKY DIODES

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