NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BCX51, BCX52 and BCX53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio and video amplifiers.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51 BCX53 (PNP)

丝印代码：BD；NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)

NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 51 … BCX 53 (PNP)

丝印代码：BD；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

丝印代码：BD；High Collector Current

FEATURES ● High current (max. 1 A). ● Low voltage (max. 45 V).

丝印代码：BD；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • L

NPN Silicon AF Transistor

Features: • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types:BCX51/BCX52/BCX53

45 V, 1 A NPN medium power transistors

丝印代码：BD；Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

Plastic-Encapsulate Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

丝印代码：BD；NPN TRANSISTOR

VOLTAGE 45~80.0 Volts CURRENT 1.0 Ampers FEATURES ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

NPN Switching Transistor

Features ® For AF driver and output stages ® High collector current ® Low collector-emitter saturation voltage ® Complementary types: TPBCX51/TPBCX52/TPBCX53.

45 V, 1 A NPN medium power transistor

NPN medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package.PNP complement: BCX51. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

中等功率双极型晶体管

General Purpose Transistor

丝印代码：BD；NPN Plastic-Encapsulate Transistors

文件：1.88778 Mbytes Page：5 Pages

45 V, 1 A NPN medium power transistors

45 V, 1 A NPN medium power transistors

文件：160.55 Kbytes Page：15 Pages

For AF driver and output stages

文件：526.17 Kbytes Page：8 Pages

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：290 Kbytes Page：2 Pages

45 V, 1 A NPN medium power transistors

文件：299.68 Kbytes Page：22 Pages

NPN Plastic-Encapsulate Transistors

文件：484.6 Kbytes Page：2 Pages

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

丝印代码：BD；45 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according

丝印代码：B7；45 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

45 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 45V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 45V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 BCP53 (PNP)