PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE). FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption:

CMOS 16K (2K x 8) Static RAM

DESCRIPTION The LH5116S is a static RAM organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It operates at a low supply voltage of 3 V ±10. FEATURES • 2,048 × 8 bit organization • Access time: 1000 ns (MAX.) • Low-power consumption: Operating: 33 mW (

5 CHANNELS VIDEO SWITCH

5 CHANNELS VIDEO SWITCH ■ EACH CHANNEL EXCEPT FAST BLANKING HAS 6dB GAIN ■ R, G, B AND VIDEO SIGNALS ARE CLAMPED TO THESAME REFERENCE VOLTAGEIN ORDER TO HAVE NO OUTPUT DIFFERENTIAL VOLTAGE WHEN SWITCHING ■ ALL INPUT LEVELS COMPATIBLE WITH NFC 92250 AND EN 50049 NORMS ■ 30MHz BAND WIDTH FOR R,

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing