PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Medium power general purposes • Driver stages of audio amplifiers.

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54 BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=-1.0A • Collector-Base Voltage: V(BR)CBO=-45V • Marking Code

PNP Medium power transistors

FEATURES ● For AF driver and output stages. ● High collector current. ● Low collector-emitter saturation voltage. ● Complementary types: BCX54/BCX55/BCX56. APPLICATIONS ● Medium power general purposes. ● Driver stages of audio amplifiers.

PNP Medium Power Transistors

Features ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current

丝印代码：AC；Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Medium Power General Purposes ● Driver Stages of Audio Amplifiers

PNP Silicon AF Transistors

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 54 … BCX 56 (NPN)

丝印代码：AC；45 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

Plastic-Encapsulate Transistors

FEATURES • IC = -1A Continuous Collector Current • Low Saturation Voltage VCE(sat)

45 V, 1 A PNP medium power transistor

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX54. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

PNP Silicon AF Transistors

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PNP Plastic-Encapsulate Transistors

文件：329.96 Kbytes Page：2 Pages

丝印代码：AC；TRANSISTOR (PNP)

文件：265.5 Kbytes Page：6 Pages

丝印代码：AC；TRANSISTOR (PNP)

文件：335.96 Kbytes Page：6 Pages

SURFACE MOUNT PNP SILICON TRANSISTOR

文件：290.14 Kbytes Page：2 Pages

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

45 V, 1 A PNP medium power transistors

PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

45 V, 1 A PNP power bipolar transistors

PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n NPN complement\n Nexperia\n JEITA\n JEDEC\n BCX51T\n SOT89\n SC-62\n TO-243\n BCX54T\n BCX51-10T\n BCX54-10 • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

丝印代码：C6；45 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

45 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN)

PNP Silicon AF Transistors

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54 BCP56 (NPN)