PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

丝印代码：DH；PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS – BCW68F – DF BCW68FR – 7T BCW68G – DG BCW68GR – 5T BCW68H – DH BCW68HR – 7N COMPLEMENTARY TYPES – BCW66

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Small Signal Transistor 330mW

Features • Ideally Suited for Automatic Insertion • Low Current, Low Voltage • Epitaxial Planar Die Construction • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Com

45V PNP MEDIUM POWER TRANSISTOR IN SOT23

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

PNP General Purpose Amplifier

Features: •For general AF applications •High current gain •Low collector-emitter saturation voltage •Complementary types: BCW65,BCW66(NPN) Applications: •This device is designed for general purpose amplifier and switching applications

丝印代码：DH；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)

丝印代码：DH；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

High Collector Current

● PARTMARKING DETAILS – BCW68F – DF BCW68G – DG BCW68H – DH ● COMPLEMENTARY TYPES – BCW66

丝印代码：EV；45 V, 800 mA PNP general-purpose transistor

General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • High current • AEC-Q101 qualified Applications • General-purpose switching and amplification

丝印代码：EV；45 V, 800 mA PNP general-purpose transistor

1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick

45 V, 800 mA PNP general-purpose transistor

PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complements: BCW66F/G/H. • High current\n• AEC-Q101 qualified;

小信号双极型晶体管

PNP, 45V, 0.8A, SOT23

PNP Transistors

文件：1.29839 Mbytes Page：3 Pages

PNP Transistors

文件：1.44421 Mbytes Page：3 Pages

PNP Small Signal Transistor 330mW

文件：186.59 Kbytes Page：3 Pages

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件：300.32 Kbytes Page：2 Pages

PNP Silicon AF Transistors

文件：79.34 Kbytes Page：8 Pages

SURFACE MOUNT PNP SILICON TRANSISTOR

文件：328.78 Kbytes Page：2 Pages

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

丝印代码：7N；PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS – BCW68F – DF BCW68FR – 7T BCW68G – DG BCW68GR – 5T BCW68H – DH BCW68HR – 7N COMPLEMENTARY TYPES – BCW66

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

丝印代码：DH；45V PNP MEDIUM POWER TRANSISTOR IN SOT23

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

丝印代码：DH；45V PNP MEDIUM POWER TRANSISTOR IN SOT23

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

PNP Small Signal Transistor 330mW

文件：186.59 Kbytes Page：3 Pages

45V PNP MEDIUM POWER TRANSISTOR IN SOT23

文件：199.5 Kbytes Page：5 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 45V 0.8A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 0.8A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个