NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

NPN Silicon AF Transistor

NPN Silicon AF Transistor • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW67, BCW68 (PNP)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and re

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Complementary to BCW68 BCW66 is subdivided into three groups F,G and H according to DC current gain

NPN General Purpose Transistors

Features ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage.

SMALL SIGNAL NPN TRANSISTORS

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIALPLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING ■ PNP COMPLEMENT IS BCW68

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Complementary to BCW68. Applications Medium power amplifier applications.

High Collector Current

SOT-23 TRANSISTOR

45 V, 800 mA NPN general-purpose transistor

General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H Features and benefits • High current • AEC-Q101 qualified Applications • General-purpose switching and amplification

45 V, 800 mA NPN general-purpose transistor

1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification

NPN Silicon Epitaxial Planar Transistor

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小信号晶体管

TRANSISTOR(NPN)

晶体管

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

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NPN Plastic Encapsulated Transistor

FEATURES • Complementary to BCW68

丝印代码：EQ；45 V, 800 mA NPN general-purpose transistor

General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H Features and benefits • High current • AEC-Q101 qualified Applications • General-purpose switching and amplification

NPN Silicon AF Transistors (For general AF applications High current gain)

NPN Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 67, BCW 68 (PNP)

丝印代码：EQ；45 V, 800 mA NPN general-purpose transistor

1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification

SMALL SIGNAL NPN TRANSISTORS

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIALPLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING ■ PNP COMPLEMENT IS BCW68

NPN General Purpose Amplifier

FEATURES ● For general AF appilications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW67,BCW68(PNP) APPLICATIONS ● General purpose medium power amplifier. ● Switching appilication.

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and re

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and re

SURFACE MOUNT NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLO

丝印代码：EF；NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

NPN Silicon AF Transistor

NPN Silicon AF Transistor • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW67, BCW68 (PNP)

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR N–P–N transistor

丝印代码：7P；NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

NPN General Purpose Amplifier

NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13.

丝印代码：EG；NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR N–P–N transistor

NPN Silicon AF Transistor

NPN Silicon AF Transistor • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW67, BCW68 (PNP)

SURFACE MOUNT NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLO

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and re

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and re

NPN General Purpose Amplifier

FEATURES ● For general AF appilications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW67,BCW68(PNP) APPLICATIONS ● General purpose medium power amplifier. ● Switching appilication.

丝印代码：ER；45 V, 800 mA NPN general-purpose transistor

General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H Features and benefits • High current • AEC-Q101 qualified Applications • General-purpose switching and amplification

丝印代码：ER；45 V, 800 mA NPN general-purpose transistor

1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification

SMALL SIGNAL NPN TRANSISTORS

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIALPLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING ■ PNP COMPLEMENT IS BCW68

NPN Silicon AF Transistors (For general AF applications High current gain)

NPN Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 67, BCW 68 (PNP)

NPN Plastic Encapsulated Transistor

FEATURES • Complementary to BCW68

General Purpose Transistors

General Purpose Transistors NPN Silicon ● We declare that the material of product compliance with RoHS requirements. Pb-Free package is available RoHS product for packing cod suffix G Halogen free product for packing code suffix H

丝印代码：EG*；General Purpose Transistor

General Purpose Transistor NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：EG*；General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：5T；NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

丝印代码：EH；NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

NPN Silicon AF Transistor

NPN Silicon AF Transistor • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW67, BCW68 (PNP)

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR N–P–N transistor

NPN General Purpose Amplifier

FEATURES ● For general AF appilications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW67,BCW68(PNP) APPLICATIONS ● General purpose medium power amplifier. ● Switching appilication.

Bipolar Single Transistor NPN

Features • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW67, BCW68 (PNP) Applications • General purpose medium power amplifier • Switching application Description Transistor, NPN, 0.8A, 45V, SOT-23

SURFACE MOUNT NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLO

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and re

NPN Small Signal Transistor 330mW

Features ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Ideally Suited for Automatic Insertion ● 150°C Junction Temperature ● Low Current, Low Voltage ● Epitaxial Planar Die Construction ● Epoxy meets UL 94 V-0 flammability rating ● Mo

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and re

45V NPN SMALL SIGNAL TRANSISTOR IN SOT23

Features  BVCEO > 45V  IC = 800mA High Continuous Collector Current  Low Saturation Voltage VCE(sat)

丝印代码：ES；45 V, 800 mA NPN general-purpose transistor

1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification

丝印代码：ES；45 V, 800 mA NPN general-purpose transistor

General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements: BCW68F/G/H Features and benefits • High current • AEC-Q101 qualified Applications • General-purpose switching and amplification

SMALL SIGNAL NPN TRANSISTORS

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIALPLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING ■ PNP COMPLEMENT IS BCW68

NPN Plastic Encapsulated Transistor

FEATURES • Complementary to BCW68