PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)

PNP Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BCW 60, BCX 70 (NPN)

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR

PNP Silicon AF Transistor

PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise applications.

Surface Mount General Purpose Si-Epi-Planar Transistors

PNP Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP general purpose transistors

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60. FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification.

General Purpose Transistor

■ Features ● Low current ● Low voltage ● General Purpose Transistor

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors

General Purpose Tramsistor

PNP Epitaxial Silicon Transistor General Purpose Transistor

SOT-23 Plastic-Encapsulate Transistors

FEATURES Low current Low voltage General Purpose Transistor

PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 32 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60.

PNP general purpose transistors

AF 通用晶体管

PNP Transistors

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PNP Silicon AF Transistors

文件：561.08 Kbytes Page：11 Pages

PNP Transistors

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PNP EPITAXIAL SILICON TRANSISTOR

文件：33.74 Kbytes Page：1 Pages

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

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-0.1A , -32V PNP Plastic Encapsulated Transistor

文件：1.64521 Mbytes Page：2 Pages

PNP Silicon AF Transistors

文件：169.63 Kbytes Page：11 Pages

General Purpose Transistor

文件：47.48 Kbytes Page：4 Pages

General Purpose Transistors

General Purpose Transistors PNP Silicon

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 32V 0.1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Plastic Encapsulated Transistor

文件：1.64521 Mbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 32V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS PNP 32V 0.2A SST3