PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60. FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification.

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)

PNP Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BCW 60, BCX 70 (NPN)

丝印代码：BB；PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Silicon AF Transistor

PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise applications.

Surface Mount General Purpose Si-Epi-Planar Transistors

PNP Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

General Purpose Transistor

■ Features ● Low current ● Low voltage ● General Purpose Transistor

PNP general purpose transistors

丝印代码：BB；General Purpose Tramsistor

PNP Epitaxial Silicon Transistor General Purpose Transistor

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors

丝印代码：BB；SOT-23 Plastic-Encapsulate Transistors

FEATURES Low current Low voltage General Purpose Transistor

丝印代码：BB；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 32 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: BCW60.

PNP general purpose transistors

AF 通用晶体管

PNP Epitaxial Silicon Transistor

丝印代码：BBs；PNP Silicon AF Transistors

文件：561.08 Kbytes Page：11 Pages

Plastic-Encapsulated Multiple Transistors ??Quad Surface Mount (Case 751B-SO-16) ??NPN/PNP)

文件：53.1 Kbytes Page：1 Pages

PNP Transistors

文件：651.64 Kbytes Page：2 Pages

PNP Silicon AF Transistors

文件：169.63 Kbytes Page：11 Pages

PNP Transistors

文件：516.32 Kbytes Page：2 Pages

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件：299.16 Kbytes Page：2 Pages

-0.1A , -32V PNP Plastic Encapsulated Transistor

文件：1.64516 Mbytes Page：2 Pages

PNP EPITAXIAL SILICON TRANSISTOR

文件：31.36 Kbytes Page：1 Pages

丝印代码：BB；General Purpose Transistor

文件：47.48 Kbytes Page：4 Pages

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.25 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -32 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

General Purpose Transistors

General Purpose Transistors PNP Silicon

PNP Plastic Encapsulated Transistor

文件：1.64516 Mbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 32V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP TRANSISTOR

文件：150.43 Kbytes Page：1 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 32V 0.1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个