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BCV62晶体管资料
BCV62别名：BCV62三极管、BCV62晶体管、BCV62晶体三极管
BCV62生产厂家：
BCV62制作材料：Si-PNP
BCV62性质：表面帖装型 （SMD）_TEMP_KOMP
BCV62封装形式：贴片封装
BCV62极限工作电压：50V
BCV62最大电流允许值：0.1A
BCV62最大工作频率：150MHZ
BCV62引脚数：4
BCV62最大耗散功率：
BCV62放大倍数：
BCV62图片代号：H-17
BCV62vtest：50
BCV62htest：150000000
- BCV62atest：0.1
BCV62wtest：0
BCV62代换 BCV62用什么型号代替：
BCV62价格
参考价格：￥0.3177
型号：BCV62,215 品牌：NXP 备注：这里有BCV62多少钱，2025年最近7天走势，今日出价，今日竞价，BCV62批发/采购报价，BCV62行情走势销售排行榜，BCV62报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCV62 | PNP general purpose double transistor DESCRIPTION PNP double transistor in a SOT143B plastic package. NPN complement: BCV61. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pair. APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors. | Philips 飞利浦 |   | |
BCV62 | PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) Preliminary Data ● To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage | SIEMENS 西门子 | | |
BCV62 | PNP Silicon Double Transistor PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | Infineon 英飞凌 | | |
BCV62 | PNP general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage | KEXIN 科信电子 | | |
BCV62 | PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package | NEXPERIA 安世 | | |
BCV62 | NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs | NEXPERIA 安世 | | |
BCV62 | PNP general-purpose double transistors 文件：154.35 Kbytes Page：14 Pages | Philips 飞利浦 | | |
BCV62 | 30V,0.1A,General Purpose PNP Bipolar Transistor | GALAXY 银河微电 | | |
BCV62 | PNP Silicon Double Transistor | Infineon 英飞凌 | | |
BCV62 | PNP general-purpose double transistors | NEXPERIA 安世 | | |
NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs | NEXPERIA 安世 | | ||
PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package | NEXPERIA 安世 | | ||
PNP general purpose double transistor DESCRIPTION PNP double transistor in a SOT143B plastic package. NPN complement: BCV61. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pair. APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors. | Philips 飞利浦 | | ||
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) Preliminary Data ● To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage | SIEMENS 西门子 | | ||
PNP Silicon Double Transistor PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | Infineon 英飞凌 | | ||
PNP general purpose double transistor DESCRIPTION PNP double transistor in a SOT143B plastic package. NPN complement: BCV61. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pair. APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors. | Philips 飞利浦 | | ||
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) Preliminary Data ● To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage | SIEMENS 西门子 | | ||
PNP Silicon Double Transistor PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | Infineon 英飞凌 | | ||
NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs | NEXPERIA 安世 | | ||
PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package | NEXPERIA 安世 | | ||
PNP general purpose double transistor DESCRIPTION PNP double transistor in a SOT143B plastic package. NPN complement: BCV61. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pair. APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors. | Philips 飞利浦 | | ||
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) Preliminary Data ● To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage | SIEMENS 西门子 | | ||
PNP Silicon Double Transistor PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | Infineon 英飞凌 | | ||
PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package | NEXPERIA 安世 | | ||
NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs | NEXPERIA 安世 | | ||
封装/外壳：TO-253-4，TO-253AA 包装：管件 描述：TRANS PNP 30V 100MA DUAL SOT143B 分立半导体产品 晶体管 - 特殊用途 | ETC 知名厂家 | ETC | | |
PNP Silicon Double Transistor 文件：74.07 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
PNP general-purpose double transistors 文件：154.35 Kbytes Page：14 Pages | Philips 飞利浦 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
PNP Silicon Double Transistor 文件：74.07 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
PNP Silicon Double Transistor 文件：536.32 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
封装/外壳：TO-253-4，TO-253AA 包装：管件 描述：TRANS PNP 30V 100MA DUAL SOT143B 分立半导体产品 晶体管 - 特殊用途 | ETC 知名厂家 | ETC | | |
PNP Silicon Double Transistor 文件：536.32 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
PNP Silicon Double Transistor 文件：74.07 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
PNP Silicon Double Transistor 文件：536.32 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
PNP Silicon Double Transistor 文件：74.07 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
PNP Silicon Double Transistor 文件：536.32 Kbytes Page：7 Pages | Infineon 英飞凌 | |
BCV62产品属性
- 类型
描述
- 型号
BCV62
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
PNP Silicon Double Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
SOT-143 |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
INFINEON/英飞凌 |
25+ |
SOT143 |
13901 |
INFINEON/英飞凌原装特价BCV62AE6327即刻询购立享优惠#长期有货 |
|||
恩XP |
23+ |
SOT-89 |
2890 |
原厂原装正品 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
48 |
143B |
NXP/恩智浦 |
9 |
92 |
|||
NEXPERIA |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
INFINEON/英飞凌 |
25+ |
SOT-143 |
25000 |
全新原装现货,假一赔十 |
|||
恩XP |
25+ |
SOT143B |
3000 |
公司原装现货常备物料! |
|||
OTHER/其它 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
|||
INFINEON/英飞凌 |
SOT23-23 |
23+ |
6000 |
专业配单原装正品假一罚十 |
BCV62芯片相关品牌
BCV62规格书下载地址
BCV62参数引脚图相关
- C80
- c62f
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- c3055
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- BCR8CM-8
- BCR8CM-6
- BCR8CM-4
- BCR8CM-12
- BCR8CM-10
- BCR8AM-10
- BCR8A-8
BCV62数据表相关新闻
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原装现货
2019-9-11
DdatasheetPDF页码索引
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