PNP Darlington transistors

DESCRIPTION PNP Darlington transistor in a SOT89 plastic package. NPN complements: BCV29 and BCV49. FEATURES • Very high DC current gain (min. 10000) • High current (max. 500 mA) • Low voltage (max. 60 V). APPLICATIONS • Where very high amplification is required.

PNP SILICON PLANAR DARLINGTON TRANSISTOR

SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR COMPLEMENTARY TYPE – BCV49 PARTMARKING DETAIL – EE

PNP Silicon Darlington Transistors (For general AF applications High collector current)

PNP Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 29, BCV 49 (NPN)

PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV29, BCV49 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP Darlington transistors

PNP Darlington transistor

1. General description PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BCV49 2. Features and benefits • Very high DC current gain (min. 10000) • High current (max. 500 mA) • Low voltage (max. 60 V) • AEC-Q101 qualified

PNP Silicon Darlington Transistors

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For general AF applications

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封装/外壳：TO-243AA 包装：管件 描述：TRANS PNP DARL 60V 0.5A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS PNP DARL 60V 0.5A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个