NPN SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * High VCEO * Low saturation voltage

SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * High VCEO * Low saturation voltage

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

NPN Darlington Transistor

Description This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from process 05.

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. FEATURES • Medium current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications.

SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * High VCEO * Low saturation voltage

Surface mount Si-Epitaxial PlanarTransistors

• Power dissipation 250 mW • Plastic case SOT-23 (TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Surface Mount Darlington Transistor

Features • High Collector Current • High Current Gain • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • M

NPN Darlington transistors

TRANSISTOR (NPN)

FEATURES ● High Collector Current ● High Current Gain

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Collector Current ● High Current Gain

NPN Darlington Plastic Encapsulated Transistor

FEATURES ● For general AF application high collector current ● High current gain

NPN Darlington Transistors

NPN Darlington Transistors for preamplifier input applications

NPN Silicon Darlington Transistors (For general AF applications High collector current)

NPN Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 26, BCV 46 (PNP)

丝印代码：FF；NPN Darlington Amplifier Transistor

FEATURES ● Complementary to BCV26,BCV46. ● High collector current. ● High current gain. ● For general AF applications. ● Complementary types:BCV26,BCV46 APPLICATIONS ● NPN silicon darlington transistor.

丝印代码：FF；SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Current High Current Gain

NPN Darlington Transistors

NPN Darlington Transistors for preamplifier input applications

丝印代码：FF；NPN Darlington transistor

1. General description NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 2. Features and benefits • Medium current of 500 mA • Low voltage of 30 V • High DC current gain of minimum 4000 • AEC-Q101 qualified 3. App

丝印代码：FF；NPN Darlington Transistors

NPN Darlington Transistors Features ● High Collector Current. ● High Current Gain.

DARLINGTON TRANSISTOR (NPN)

DARLINGTON TRANSISTOR (NPN) FEATURES ● High Collector Current ● High Current Gain

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV26, BCV46 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

NPN Darlington transistor

NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: BCV26 • Medium current of 500 mA\n• Low voltage of 30 V\n• High DC current gain of minimum 4000\n• AEC-Q101 qualified;

丝印代码：FFs；NPN Silicon Darlington Transistors

文件：528.92 Kbytes Page：7 Pages

NPN Silicon Darlington Transistors

文件：76.7 Kbytes Page：8 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 30V 1.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：FF；NPN Darlington Transistor

文件：492.8 Kbytes Page：5 Pages

NPN Darlington Transistor

文件：223.9 Kbytes Page：7 Pages

NPN Darlington Transistor

文件：223.9 Kbytes Page：7 Pages

NPN Silicon Darlington Transistors

文件：76.7 Kbytes Page：8 Pages

NPN Silicon Darlington Transistors

文件：528.92 Kbytes Page：7 Pages

NPN Darlington transistors

文件：122.48 Kbytes Page：7 Pages

NPN Darlington Plastic Encapsulated Transistor

文件：461.91 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN DARL 30V 1.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Darlington Transistor

文件：492.8 Kbytes Page：5 Pages

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