PNP Darlington transistors

DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • Very high DC current gain (min. 10000). APPLICATIONS • Where very high amplification is required.

PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * Low saturation voltage COMPLEMENTARY TYPE - BCV26 - BCV27 BCV46 - BCV47

PNP Silicon Darlington Transistors (For general AF applications High collector current)

PNP Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 27, BCV 47 (NPN)

PNP Darlington Transistor

PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.

PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV27, BCV47 (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Darlington transistors

FEATURES •High current (max. 500 mA) •Low voltage (max. 60 V) •Very high DC current gain (min. 10000). APPLICATIONS •Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47.

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * Low saturation voltage COMPLEMENTARY TYPE – BCV26 - BCV27 BCV46 - BCV47 PARTMARKING DETAILS – BCV26 - ZFD BCV46 - ZFE

PNP Darlington Transistor

Description This device is designed for applications requiring extremely high current gain at collector currents to 800 mA. Sourced from Process 61.

PNP Darlington Transistors

PNP Darlington Transistors for preamplifier input applications

PNP Darlington transistors

PNP Silicon Darlington Transistors

文件：76.8 Kbytes Page：8 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 30V 1.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Darlington Transistor

文件：298.3 Kbytes Page：9 Pages

PNP Silicon Darlington Transistors

文件：528.69 Kbytes Page：7 Pages

PNP Darlington Transistor

文件：217.08 Kbytes Page：7 Pages

PNP Darlington Transistor

Description This device is designed for applications requiring extremely high current gain at collector currents to 800 mA. Sourced from Process 61.

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP DARL 30V 0.5A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Darlington Transistor

文件：217.08 Kbytes Page：7 Pages

PNP Silicon Darlington Transistors

文件：76.8 Kbytes Page：8 Pages

PNP Silicon Darlington Transistors

文件：528.69 Kbytes Page：7 Pages

PNP Darlington transistors

文件：122.64 Kbytes Page：7 Pages

Surface Mount Darlington Si-Epi-Planar Transistors

文件：106.81 Kbytes Page：2 Pages