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BCR196晶体管资料

  • BCR196别名:BCR196三极管、BCR196晶体管、BCR196晶体三极管

  • BCR196生产厂家

  • BCR196制作材料:Si-P+R

  • BCR196性质:表面帖装型 (SMD)

  • BCR196封装形式:贴片封装

  • BCR196极限工作电压:50V

  • BCR196最大电流允许值:0.1A

  • BCR196最大工作频率:<1MHZ或未知

  • BCR196引脚数:3

  • BCR196最大耗散功率

  • BCR196放大倍数

  • BCR196图片代号:H-15

  • BCR196vtest:50

  • BCR196htest:999900

  • BCR196atest:0.1

  • BCR196wtest:0

  • BCR196代换 BCR196用什么型号代替:DTA144WK,KSR2108,RN2409,UN21E,

BCR196价格

参考价格:¥0.1150

型号:BCR196E6327 品牌:INF 备注:这里有BCR196多少钱,2026年最近7天走势,今日出价,今日竞价,BCR196批发/采购报价,BCR196行情走势销售排行榜,BCR196报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BCR196

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ )

INFINEON

英飞凌

BCR196

AF 数字晶体管

PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• 无铅(符合 RoHS 标准)封装\n• 符合 AEC Q101 标准;

INFINEON

英飞凌

BCR196

PNP Silicon Digital Transistor

文件:182.2 Kbytes Page:10 Pages

INFINEON

英飞凌

BCR196

丝印代码:WXs;PNP Silicon Digital Transistor

文件:842.47 Kbytes Page:8 Pages

INFINEON

英飞凌

BCR196

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

文件:35.38 Kbytes Page:4 Pages

SIEMENS

西门子

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ )

INFINEON

英飞凌

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ )

INFINEON

英飞凌

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ )

INFINEON

英飞凌

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ , R2 = 22kΩ )

INFINEON

英飞凌

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ)

SIEMENS

西门子

PNP Silicon Digital Transistor

文件:182.2 Kbytes Page:10 Pages

INFINEON

英飞凌

PNP Silicon Digital Transistor

文件:842.47 Kbytes Page:8 Pages

INFINEON

英飞凌

PNP Silicon Digital Transistor

文件:182.2 Kbytes Page:10 Pages

INFINEON

英飞凌

PNP Silicon Digital Transistor

文件:182.2 Kbytes Page:10 Pages

INFINEON

英飞凌

丝印代码:WXs;PNP Silicon Digital Transistor

文件:842.47 Kbytes Page:8 Pages

INFINEON

英飞凌

Digital Transistor

INFINEON

英飞凌

封装/外壳:SC-70,SOT-323 包装:卷带(TR) 描述:TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

封装/外壳:SC-70,SOT-323 包装:卷带(TR) 描述:TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply)

GaAs MMIC ● Broadband Power Amplifier [ 800 3500 Mhz ] ● DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ● Single Voltage Supply ● Operating voltage range: 2.0to 6 V ● Pout = 25.5dBm at Vd=2.4V ● Pout = 27.0dBm at Vd=3.0V ● Pout = 30.0dBm at Vd=5.0V ● Overall power added efficiency up to 50 ● Easy exter

SIEMENS

西门子

Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

LM196/LM396 10 Amp Adjustable Voltage Regulator

文件:295.32 Kbytes Page:14 Pages

NSC

国半

BCR196产品属性

  • 类型

    描述

  • hFEmin:

    50

  • ICBOmax:

    100 nA

  • Ptotmax:

    200 mW

  • R1 / R2:

    2.14

  • R1:

    47 kΩ

  • R2:

    22 kΩ

  • VCBOmax:

    50 V

  • VCE(sat)max:

    0.3 V

  • VCEOmax:

    50 V

  • VEBOmax:

    10 V

  • Vi (off) max:

    2.6 100µA / 5V

  • Vi (on)max:

    2.6 V

  • Vi (on)min:

    1.5 2mA / 0.3V

  • Mounting:

    SMT

  • Polarity:

    PNP (Single)

更新时间:2026-7-29 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
SOT-23
3022
原厂订货渠道,支持BOM配单一站式服务
INFINEON/英飞凌
25+
SOT-323
32360
INFINEON/英飞凌全新特价BCR196W即刻询购立享优惠#长期有货
INFINEON
2026+
SOT-323
15000
原装正品 假一罚十!
Infineon
24+
NA
3000
进口原装正品优势供应
INF
24+
NA
6000
只做原装正品现货 欢迎来电查询15919825718
INFINEON
26+
SOD-323
86720
全新原装正品价格最实惠 假一赔百
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
inf
25+
NA
37847
专做原装正品,假一罚百!
Infineon/英飞凌
25+
SOT323-3
12700
买原装认准中赛美
Infineon/英飞凌
21+
SOT323-3
6820
只做原装,质量保证

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