丝印代码：WEs；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ)

丝印代码：WEs；NPN Silicon Digital Transistor

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丝印代码：WEs；NPN Silicon Digital Transistor

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Digital Transistor

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

HF amplifier modules

DESCRIPTION The BGY148A and BGY148B are three-stage UHF amplifier modules in a SOT421A package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 3 W

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Pow

VHF variable capacitance diode

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Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes Page：15 Pages

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes Page：15 Pages