BCR133晶体管资料
BCR133别名：BCR133三极管、BCR133晶体管、BCR133晶体三极管
BCR133生产厂家：
BCR133制作材料：Si-N+R
BCR133性质：表面帖装型 （SMD）
BCR133封装形式：贴片封装
BCR133极限工作电压：50V
BCR133最大电流允许值：0.1A
BCR133最大工作频率：<1MHZ或未知
BCR133引脚数：3
BCR133最大耗散功率：
BCR133放大倍数：
BCR133图片代号：H-15
BCR133vtest：50
BCR133htest：999900
- BCR133atest：0.1
BCR133wtest：0
BCR133代换 BCR133用什么型号代替：DTC114EK,KSR1102,RN1402,UN2211,
BCR133价格
参考价格：￥0.1150
型号：BCR133E6327 品牌：Infineon Technologies 备注：这里有BCR133多少钱，2026年最近7天走势，今日出价，今日竞价，BCR133批发/采购报价，BCR133行情走势销售排行榜，BCR133报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCR133 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=10kΩ) | SIEMENS 西门子 |   | |
BCR133 | 丝印代码：WCs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | |
BCR133 | Digital Transistor Features © Epitaxial planar die construction | © Builtin biasing resistors (Ri: 10kQ, Re: 10k) Also avaiabie n lead free version | RoHS compliant with Halogen-fee | | TECHPUBLIC 台舟电子 | | |
BCR133 | AF 数字晶体管 NPN硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR133S：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 要求; | INFINEON 英飞凌 | | |
BCR133 | 丝印代码：WCs；NPN Silicon Digital Transistor 文件：146.46 Kbytes Page：12 Pages | INFINEON 英飞凌 | | |
丝印代码：WCs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
丝印代码：WC；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
丝印代码：WCs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistors (R1=10kΩ, R2=10kΩ) | SIEMENS 西门子 | | ||
AF 数字晶体管 NPN硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR133S：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装1)\n• 符合 AEC Q101 要求1) 1可根据特殊要求提供含铅封装; | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • BCR133S: Two internally isolated transistors with good matching in one multichip package • BCR133S: For orientation in reel see | INFINEON 英飞凌 | | ||
丝印代码：WC*；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
丝印代码：WCs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=10kΩ) | SIEMENS 西门子 | | ||
NPN Silicon Digital Transistor 文件：146.46 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PREBIAS NPN SOT23 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PREBIAS NPN 0.2W SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
丝印代码：WCs；NPN Silicon Digital Transistor 文件：146.46 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
丝印代码：WCs；NPN Silicon Digital Transistor 文件：146.46 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
丝印代码：WCs；NPN Silicon Digital Transistor 文件：146.46 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
AF 数字晶体管 | INFINEON 英飞凌 | | ||
L-BAND SPDT SWITCH DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us | NEC 瑞萨 | | ||
L-BAND SPDT SWITCH DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the | NEC 瑞萨 | | ||
L-BAND SPDT SWITCH DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us | NEC 瑞萨 | | ||
3-Ampere Adjustable Negative Regulators 文件：268.49 Kbytes Page：10 Pages | NSC 国半 | | ||
3-Ampere Adjustable Negative Regulators 文件：268.49 Kbytes Page：10 Pages | NSC 国半 | |
BCR133产品属性
- 类型
描述
- hFEmin：
30
- ICBOmax：
100 nA
- Ptotmax：
200 mW
- R1 / R2：
1
- R1：
10 kΩ
- R2：
10 kΩ
- VCBOmax：
50 V
- VCE(sat)max：
0.3 V
- VCEOmax：
50 V
- VEBOmax：
10 V
- Vi (off) max：
1.5 100µA / 5V
- Vi (on)max：
1.5 V
- Vi (on)min：
1 2mA / 0.3V
- Mounting：
SMT
- Polarity：
NPN (Single)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
SOT-323-3 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
INFINEON |
2016+ |
SOT-23 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MSV |
2026+ |
SOT-23 |
3000 |
原装正品 假一罚十! |
|||
INFINEON/英飞凌 |
25+ |
SOT-363 |
13885 |
INFINEON/英飞凌原装特价BCR133S即刻询购立享优惠#长期有货 |
|||
Infineon(英飞凌) |
25+ |
SOT-23 |
12000 |
原装品质,专业护航,省心采购 |
|||
INFENIO |
23+ |
SOT-323 |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon(英飞凌) |
23+ |
SOT-23 |
19850 |
原装正品,假一赔十 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
BCR133规格书下载地址
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