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BCR133晶体管资料

  • BCR133别名:BCR133三极管、BCR133晶体管、BCR133晶体三极管

  • BCR133生产厂家

  • BCR133制作材料:Si-N+R

  • BCR133性质:表面帖装型 (SMD)

  • BCR133封装形式:贴片封装

  • BCR133极限工作电压:50V

  • BCR133最大电流允许值:0.1A

  • BCR133最大工作频率:<1MHZ或未知

  • BCR133引脚数:3

  • BCR133最大耗散功率

  • BCR133放大倍数

  • BCR133图片代号:H-15

  • BCR133vtest:50

  • BCR133htest:999900

  • BCR133atest:0.1

  • BCR133wtest:0

  • BCR133代换 BCR133用什么型号代替:DTC114EK,KSR1102,RN1402,UN2211,

BCR133价格

参考价格:¥0.1150

型号:BCR133E6327 品牌:Infineon Technologies 备注:这里有BCR133多少钱,2026年最近7天走势,今日出价,今日竞价,BCR133批发/采购报价,BCR133行情走势销售排行榜,BCR133报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BCR133

丝印代码:WCs;NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

BCR133

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=10kΩ)

SIEMENS

西门子

BCR133

Digital Transistor

Features © Epitaxial planar die construction | © Builtin biasing resistors (Ri: 10kQ, Re: 10k) Also avaiabie n lead free version | RoHS compliant with Halogen-fee |

TECHPUBLIC

台舟电子

BCR133

AF 数字晶体管

NPN硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR133S:两个内部隔离的晶体管,在一个多芯片封装中具有良好的匹配性\n• 无铅(符合 RoHS 标准)封装\n• 符合 AEC Q101 要求;

INFINEON

英飞凌

BCR133

丝印代码:WCs;NPN Silicon Digital Transistor

文件:146.46 Kbytes Page:12 Pages

INFINEON

英飞凌

丝印代码:WCs;NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

丝印代码:WC;NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

丝印代码:WCs;NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistors (R1=10kΩ, R2=10kΩ)

SIEMENS

西门子

AF 数字晶体管

NPN硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR133S:两个内部隔离的晶体管,在一个多芯片封装中具有良好的匹配性\n• 无铅(符合 RoHS 标准)封装1)\n• 符合 AEC Q101 要求1) 1可根据特殊要求提供含铅封装;

INFINEON

英飞凌

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • BCR133S: Two internally isolated transistors with good matching in one multichip package • BCR133S: For orientation in reel see

INFINEON

英飞凌

丝印代码:WC*;NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

丝印代码:WCs;NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

INFINEON

英飞凌

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ, R2=10kΩ)

SIEMENS

西门子

NPN Silicon Digital Transistor

文件:146.46 Kbytes Page:12 Pages

INFINEON

英飞凌

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:剪切带(CT)带盒(TB) 描述:TRANS PREBIAS NPN SOT23 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS PREBIAS NPN 0.2W SOT23-3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置

INFINEON

英飞凌

丝印代码:WCs;NPN Silicon Digital Transistor

文件:146.46 Kbytes Page:12 Pages

INFINEON

英飞凌

丝印代码:WCs;NPN Silicon Digital Transistor

文件:146.46 Kbytes Page:12 Pages

INFINEON

英飞凌

丝印代码:WCs;NPN Silicon Digital Transistor

文件:146.46 Kbytes Page:12 Pages

INFINEON

英飞凌

AF 数字晶体管

INFINEON

英飞凌

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

NEC

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

NEC

瑞萨

3-Ampere Adjustable Negative Regulators

文件:268.49 Kbytes Page:10 Pages

NSC

国半

3-Ampere Adjustable Negative Regulators

文件:268.49 Kbytes Page:10 Pages

NSC

国半

BCR133产品属性

  • 类型

    描述

  • hFEmin:

    30

  • ICBOmax:

    100 nA

  • Ptotmax:

    200 mW

  • R1 / R2:

    1

  • R1:

    10 kΩ

  • R2:

    10 kΩ

  • VCBOmax:

    50 V

  • VCE(sat)max:

    0.3 V

  • VCEOmax:

    50 V

  • VEBOmax:

    10 V

  • Vi (off) max:

    1.5 100µA / 5V

  • Vi (on)max:

    1.5 V

  • Vi (on)min:

    1 2mA / 0.3V

  • Mounting:

    SMT

  • Polarity:

    NPN (Single)

更新时间:2026-7-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
SOT-323-3
3022
原厂订货渠道,支持BOM配单一站式服务
INFINEON/英飞凌
25+
SOT-363
13885
INFINEON/英飞凌原装特价BCR133S即刻询购立享优惠#长期有货
INFENIO
23+
SOT-323
6850
只做原装正品假一赔十为客户做到零风险!!
Infineon(英飞凌)
25+
SOT-363-6
21000
原装正品现货,原厂订货,可支持含税原型号开票。
INFENIO
2025+
SOT-323
3000
原装进口价格优 请找坤融电子!
INFINEON
23+
SOT-363
70000
Infineon/英飞凌
2019+
SOT363
36000
原盒原包装 可BOM配套
infineon
24+
SOT363
9860
一级代理/全新现货/长期供应!
Infineon(英飞凌)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon(英飞凌)
23+
25650
新到现货,只做原装进口

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