NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ)

NPN silicon Digital Transistor

NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1=4.7 kΩ) • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see package information

NPN silicon Digital Transistor

文件：258.64 Kbytes Page：12 Pages

Digital Transistor

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Variable capacitance diode

DESCRIPTION The BB119 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • C10: 17 pF; ratio: 1.3. APPLICATIONS • Automatic frequen

HIGH SPEED DUAL COMPARATORS

DESCRIPTION These products are precision high speed dual comparators designed to operate overa wide range of supply voltages down to a single 5V logic supply and ground and have low input currents and high gains. The open collector of the output stage makes compatible with TTL as well as capable

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

High Speed Dual Comparator

文件：329.59 Kbytes Page：11 Pages

High Speed Dual Comparator

文件：329.59 Kbytes Page：11 Pages