BCR晶体三极管芯片数据手册库存现货价格Vishay-IC资料网

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BCR晶体管资料

BCR别名：BCR三极管、BCR晶体管、BCR晶体三极管
BCR生产厂家：
BCR制作材料：Si-PNP
BCR性质：表面帖装型（SMD）_低频或音频放大（LF）
BCR封装形式：贴片封装
BCR极限工作电压：40V
BCR最大电流允许值：2A
BCR最大工作频率：100MHZ
BCR引脚数：3
BCR最大耗散功率：
BCR放大倍数：
BCR图片代号：H-100
BCRvtest：40
BCRhtest：100000000
BCRatest：2
BCRwtest：0

BCR代换 BCR用什么型号代替：2SB1188,

BCR价格

参考价格：￥0.2396

型号：BCR08PNH6327 品牌：INF 备注：这里有BCR多少钱，2024年最近7天走势，今日出价，今日竞价，BCR批发/采购报价，BCR行情走势销售排行榜，BCR报价。

型号	功能描述	生产厂家&企业
BCR	Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate	VishayVishay Siliconix 威世科技
BCR	Thin Film, Back-Contact Resistor 文件：102.64 Kbytes Page：3 Pages	VishayVishay Siliconix 威世科技
BCR_V01	Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate	VishayVishay Siliconix 威世科技
BCR08AM	LOW POWER USE PLANAR PASSIVATION TYPE •IT(RMS).....................................................................0.8A •VDRM.......................................................................600V •IRGTI,IRGTIII............................................................5mA APPLICATION Electricfan,aircleaner	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AM-12	Triac Low Power Use TriacLowPowerUse Features •IT(RMS):0.8A •VDRM:600V •IRGTI,IRGTIII:5mA •PlanarPassivationType	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AM-12A	Triac Low Power Use TriacLowPowerUse Features •IT(RMS):0.8A •VDRM:600V •IRGTI,IRGTIII:5mA •PlanarPassivationType	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AM-12A-A6	Triac Low Power Use TriacLowPowerUse Features •IT(RMS):0.8A •VDRM:600V •IRGTI,IRGTIII:5mA •PlanarPassivationType	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AM-12A-TB	Triac Low Power Use TriacLowPowerUse Features •IT(RMS):0.8A •VDRM:600V •IRGTI,IRGTIII:5mA •PlanarPassivationType	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AM-14	LOW POWER USE PLANAR PASSIVATION TYPE ●IT(RMS)...............................................................0.8A ●VDRM.................................................................700V ●IFGTI,IRGTII,IRGTIII.......................................5mA APPLICATION ContactlessACswitches,heating,refrigerator,w	MitsubishiMITSUBISHI electlic 三菱电机
BCR08AM-14A	Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •PlanarPassivationType	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AM-14A-A6	Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •PlanarPassivationType	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AM-14A-TB	Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •PlanarPassivationType	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AS	LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS).....................................................................0.8A •VDRM.......................................................................600V •IFGTI,IRGTI,IRGTIII..............................................5mA •IFGTIII...............................	POWEREX POWEREX
BCR08AS	MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 •IT(RMS).....................................................................0.8A •VDRM.......................................................................600V •IFGTⅠ,IRGTⅡ,IRGTⅢ..............................................5mA •IFGT#....................................	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AS-12	Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGT:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolapplic	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AS-12A	Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGTIII:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolap	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AS-12A-T14	Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGTIII:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolap	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AS-12A-T14	Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGT:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolapplic	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AS-12A-T24	Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGT:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolapplic	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AS-14A	700V - 0.8A - Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •CompletedPbFree •Non-InsulatedType •PlanarPassivationType •SurfaceMountedType Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecon	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AS-14AT14B10	700V - 0.8A - Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •CompletedPbFree •Non-InsulatedType •PlanarPassivationType •SurfaceMountedType Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecon	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
BCR08AS-8	LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS).....................................................................0.8A •VDRM.......................................................................400V •IFGTI,IRGTII,IRGTIII.............................................5mA •IFGTIII...............................	MitsubishiMITSUBISHI electlic 三菱电机
BCR08AS-8	LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS).....................................................................0.8A •VDRM.......................................................................400V •IFGTI,IRGTII,IRGTIII.............................................5mA •IFGTIII..............................	POWEREX POWEREX
BCR08PN	NPN/PNP Silicon Digital Transistor Array NPN/PNPSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Two(galvanic)internalisolatedNPN/PNP Transistorsinonepackage •BuiltinbiasresistorNPNandPNP (R1=2.2kΩ,R2=47kΩ) •Pb-free(RoHScompliant)package •Qualified	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR08PN	NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) NPN/PNPSiliconDigitalTansistorArray •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Two(galvanic)internalisolatedNPN/PNPTransistorinonepackage •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ)	SIEMENS Siemens Ltd
BCR08PN	SMD Digital NPN/PNP Transistors Features Twocomplementarytransistorsinonepackage Costandspacesavingsbyintegrated biasresistorcombinations ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing, Switching,Amplification Commercialgrade Suffix-Q:AEC	DiotecDIOTEC 德欧泰克
BCR10	NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) NPN/PNPSiliconDigitalTansistorArray •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Two(galvanic)internalisolatedNPN/PNPTransistorinonepackage •Builtinbiasresistor(R1=10kΩ,R2=10kΩ)	SIEMENS Siemens Ltd
BCR10	NPN/PNP Silicon Digital Transistor Array NPN/PNPSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Two(galvanic)internalisolatedNPN/PNP Transistorsinonepackage •BuiltinbiasresistorNPNandPNP (R1=10kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •Qualified	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR101	NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR101F	NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR101L3	NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR101T	NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR103	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR103F	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR103L3	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR103T	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR103U	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ)	SIEMENS Siemens Ltd
BCR108	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108F	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108F	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108F	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108L3	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108L3	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108S	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108S	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108S	NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Two(galvanic)internalisolatedTransistorsinonpackage •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ)	SIEMENS Siemens Ltd
BCR108S	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108SH6327	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108T	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108T	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108TE6327	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108W	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ)	SIEMENS Siemens Ltd
BCR108W	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108W	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR108W	NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BCR10CM	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS)......................................................................10A •VDRM..............................................................400V/600V •IFGTI,IRGTI,IRGTIII.........................30mA(20mA)✽5 APPLICATION ContactlessACswitches,lightdrimmer,electric	MitsubishiMITSUBISHI electlic 三菱电机
BCR10CM	Triac 10 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch	POWEREX POWEREX

BCR产品属性

类型
描述
型号
BCR
制造商
VISHAY
制造商全称
Vishay Siliconix
功能描述
Thin Film, Back-Contact Resistor

BCR供应商更多...

更新时间：2024-4-25 13:28:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市振鑫微电子科技有限公司	BCR08AM-12	Renesas(瑞萨)	23+	N/A	589610	新到现货原厂一手货源价格秒杀代理!	询价
深圳市慧拓科技有限公司	BCR133E6327	INFENEON	19+	SOT23	3000	全新原装公司现货	询价
深圳市向鸿伟业电子有限公司	BCR08A-12	RENESAS	DIP	12500	16	只做原装进口IOR-TI-ST,可以送样品	询价
深圳市嘉合泰电子有限公司	BCR420UFD-7	DIODES达尔科技	22+	UDFN-6	6680	贸易、代理、分销商	询价
深圳市瀚珑科技有限公司	BCR-232 BCR-122 BCR-531 BCR-162	COILCRAFT/线艺	24+	SMD	4560		询价
深圳市环球伟业电子有限公司	BCR08A-12	RENESAS/Renesas Electronics Am	21+	DIP	95	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市百视威讯电子科技有限公司	BCR08A		23+	N/A	48800	正品授权货源可靠	询价
深圳市近平电子有限公司	BCR402U	INFINEON	19+	SC74-6	6000	原装现货,特价供应	询价
深圳市得捷芯城科技有限公司	BCR08A-12	MITSUBISHI/三菱	23+	NA/	3470	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	BCR601	Infineon(英飞凌)	23+	SOP-8	2669	原厂订货渠道,支持BOM配单一站式服务	询价