PNP Low Sat Transistor

双极晶体管 - 双极结型晶体管(BJT) AF TRANSISTORS

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 20V 1A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：TRANS PNP 20V 1A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH EFFICIENCY MONOLITHIC SYNCHRONOUS STEP DOWN REGULATOR

DESCRIPTION The device is dc-dc monolithic regulator specifically designed to provide extremely high efficiency. The device has on UVLO set at 2.7V cause it is part icurarly thought for single Li-ion cell applications. Output voltage can be selected by an external divider down to 0.6V. Duty

HIGH EFFICIENCY MONOLITHIC SYNCHRONOUS STEP DOWN REGULATOR

DESCRIPTION The device is dc-dc monolithic regulator specifically designed to provide extremely high efficiency. The device has on UVLO set at 2.7V cause it is part icurarly thought for single Li-ion cell applications. Output voltage can be selected by an external divider down to 0.6V. Duty

PHOTOMULTIPLIER TUBE

PHOTOMULTIPLIER TUBE High Sensitivity Bialkali Photocathode 28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES ● Spectral Response ............................ 185 to 730 nm ● Cathode Sensitivity Luminous ........................................ 70 µA/lm Typ. Radiant at 410 nm

Dual N-Channel 2.5-V (G-S) MOSFET

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Dual N-Channel 2.5-V (G-S) MOSFET

文件：51.73 Kbytes Page：4 Pages