丝印代码：BCP56T；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

丝印代码：BCP56T；80 V, 1 A NPN medium power transistors

文件：275.24 Kbytes Page：14 Pages

丝印代码：BCP56T；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

80 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product Overview Type number\n Package\n PNP complement\n Nexperia\n JEITA\n JEDEC\n BCP56T\n SOT223\n SC-73\n -\n BCP53T\n BCP56-10T\n BCP53-1 • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • High Current: 1.0 Amp • The SOT-223 package can be soldered using wave or reflow. The f

NPN Silicon Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package c

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

TRANSISTOR (NPN)

FEATURES e For AF driver and output stages e High collector current e Low collector-emitter saturation voltage eo Complementary types: BCP51 ... BCP53 (PNP)

NPN Silicon Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package c

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

80 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n NPN comlement\n Nexperia\n JEDEC\n  BCP56T-Q\n SOT223\n SC-73\n BCP53T-Q\n BCP56-10T-Q\n BCP53-10T-Q\n • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages