丝印代码：BCP56；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

80 V, 1 A NPN medium power transistors

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n PNP comlement\n Nexperia\n JEDEC\n  BCP56-Q\n SOT223\n SC-73\n BCP53-Q\n BCP56-10-Q\n BCP53-10-Q\n B • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个