NPN, 60V, 1A, SOT223

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 60V 1A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 1A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

Photoresistor

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Wire Wound Chip Inductors

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Street fire Coils for HEMI Engines

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High Current Chokes

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