PNPLowVce(sat)Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.4V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcom

PNPLowVce(sat)Transistor

Features SiliconPNPepitaxialtype LowVce(sat)-0.4V(max)@Ic/Ib=-500mA/-50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcom

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 100V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNPMEDIUMPOWERTRANSISTOR

Features •BVCEO>-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •520mWPowerDissipation •LowSaturationVoltageVCE(sat)

80V,1APNPmediumpowertransistors

80V,1APNPmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

80V,1APNPmediumpowertransistors

1.Generaldescription PNPmediumpowertransistorsinanultrathinSOT1061leadlesssmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highcurrent •Threecurrentgainselections •Highpowerdissipationcapability •Exposedheatsinkforexcellentthermalan

80V,1APNPmediumpowertransistors