PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

低电压双极晶体管

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 100V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP MEDIUM POWER TRANSISTOR

Features • BVCEO > -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 520mW Power Dissipation • Low Saturation Voltage VCE(sat)

80 V, 1 A PNP medium power transistors

80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal an

80 V, 1 A PNP medium power transistors