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BCP晶体管资料
BCP别名:BCP三极管、BCP晶体管、BCP晶体三极管
BCP生产厂家:
BCP制作材料:Si-PNP
BCP性质:表面帖装型 (SMD)_低频或音频放大 (LF)
BCP封装形式:贴片封装
BCP极限工作电压:40V
BCP最大电流允许值:2A
BCP最大工作频率:100MHZ
BCP引脚数:3
BCP最大耗散功率:
BCP放大倍数:
BCP图片代号:H-100
BCPvtest:40
BCPhtest:100000000
- BCPatest:2
BCPwtest:0
BCP代换 BCP用什么型号代替:2SB1188,
BCP价格
参考价格:¥0.6167
型号:BCP51 品牌:Fairchild 备注:这里有BCP多少钱,2024年最近7天走势,今日出价,今日竞价,BCP批发/采购报价,BCP行情走势销售排行榜,BCP报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Epitaxial Planar Transistor FEATURES TheBCP1213isdesignedforusinginpoweramplifierapplicationsorpowerswitchingapplications. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
Planar High Performance Transistor Description TheBCP156isdesignedforgeneralpurposeswitchingandamplifierapplications. Features *3AmpContinuousCurrent *60VoltVCEO *LowSaturationVoltage | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
Medium Power Transistor FEATURES •-60VoltVCEO •3Ampcontinuouscurrent •Lowsaturationvoltage | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPN Epitaxial Planar Transistor DESCRIPTION TheBCP1766issuitedfortheoutputstageof0.5Waudio,voltageregulator,andrelaydriver. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPN Epitaxial Planar Transistor DESCRIPTION TheBCP1898isdesignedforswitchingapplications. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
Planar Medium Power Transistor Description TheBCP194isdesignedformediumpoweramplifierapplications. Features *1AmpContinuousCurrent *60VoltVCEO *ComplementarytoBCP195 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
Medium Power Transistor Description TheBCP195isdesignedformediumpoweramplifierapplications. Features *1AmpContinuousCurrent *-60VVCEO *ComplementaryTOBCP194 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
Epitaxial Planar Transistor DESCRIPTION TheBCP2098isanepitaxialplanartypeNPNsilicontransistor. FEATURES •ExcellentDCCurrentGainCharacteristics •LowSaturationVoltage,TypicallyVCE(SAT)=0.25VAtIC/IB=4A/0.1A | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP29/49(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP29/49(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation1.5W •PlasticcaseSOT-223 •Weightapprox..0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtape | DiotecDIOTEC 德欧泰克 | |||
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP28/48(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
NPN Silicon Darlington Transistors NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP28/48(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Surface mount Si-Epitaxial PlanarTransistors •Powerdissipation1.5W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP29/49(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP29/49(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation1.5W •PlasticcaseSOT-223 •Weightapprox..0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtape | DiotecDIOTEC 德欧泰克 | |||
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP28/48(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
NPN Silicon Darlington Transistors NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCP28/48(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Surface mount Si-Epitaxial PlanarTransistors •Powerdissipation1.5W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
PNP medium power transistors DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP Silicon AF Transistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Surface mount Si-Epitaxial PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
PNP Medium Power Transistors ■Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | |||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
-1A , -45V PNP Plastic Encapsulate Transistor FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
45 V, 1 A PNP medium power transistors Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
High Collector Current Features •Highcollectorcurrent •1.3Wpowerdissipation. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
TRANSISTOR (PNP) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
SOT-223 Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
Plastic-Encapsulate Transistors FEATURES •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | |||
PNP Transistors Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●ComplementarytoBCP54,BCP55,BCP56 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SOT-223 Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP54...BCP56(NPN) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
PNP SILICON PLANAR EPITAXIAL TRANSISTORS GeneralPurposeMediumPowerDCApplications ComplementaryBCP54BCP55andBCP56 | CDIL CDIL | |||
SOT-223 Plastic-Encapsulate Transistors FEATURES ForAFdriverandoutputstages Highcollectorcurrent Lowcollector-emittersaturationvoltage Complementarytypes:BCP54...BCP56(NPN) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP Silicon AF Transistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PNP Plastic-Encapsulate Transistors Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | |||
PNP medium power transistors DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplements:BCP54,BCP55andBCP56. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V) •Mediumpower(max.1.3W). APPLICATIONS •Audio,telephonyandautomotiveapplications •Thickandthin-filmcircuits | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP Silicon AF Transistors PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54...BCP56(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PNP Plastic-Encapsulate Transistors Features •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54...BCP56(NPN) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammability | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
-1A , -45V PNP Plastic Encapsulate Transistor FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP Silicon Epitaxial Planar Transistor Features ®HighCollectorCurrent ®LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | |||
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features •BVCEO>-45V,-60V&-80V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | |||
PNP Silicon AF Transistors (For AF driver and output stages High collector current) PNPSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCP54…BCP56(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNPSiliconAFTransistor •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54M...BCP56M(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP Silicon AF Transistor (For AF driver and output stages High collector current) PNPSiliconAFTransistor •ForAFdriverandoutputstages •Highcollectorcurrent •Lowcollector-emittersaturationvoltage •Complementarytypes:BCP54M...BCP56M(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A NPN medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45 V, 1 A PNP medium power transistors Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |
BCP产品属性
- 类型
描述
- 型号
BCP
- 功能描述
达林顿晶体管 NPN Silicn Darlingtn TRANSISTOR
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SeCoS |
20+ |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
SeCoS |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
PHILIPS |
22+ |
SOT223 |
8000 |
原装正品支持实单 |
|||
SECOS-喜可士 |
24+25+/26+27+ |
SOT-89-3 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SeCoS |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
SECOS |
22+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
|||
SeCoS |
2023+ |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
||||
SeCoS |
22+ |
SOT-89 |
25000 |
只有原装原装,支持BOM配单 |
|||
INFINEON |
23+ |
8000 |
只做原装现货 |
||||
SeCoS |
23+ |
SOT-89 |
63000 |
原装正品现货 |
BCP规格书下载地址
BCP参数引脚图相关
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- BCF39B
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- BCF32
- BCF30R
- BCF30
- BCF29R
BCP数据表相关新闻
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