45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT563

Features  BVCEO > -45V  IC = -100mA High Collector Current  Pair of PNP Transistors That Are Intrinsically Matched (Note 1)  2 Matching on Current Gain (hFE)  2mV Matching on Base-Emitter Voltage (VBE)  Fully Internally Isolated in a Small Surface Mount Package  Totally Lead-Free & F

NPN/NPN matched double transistors

General description NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Features ■ Current gain matching ■ Base-emitter voltage matching ■ Drop-in replacement for standard double transistors Applications ■

PNP/PNP matched double transistors

丝印代码：3B；PNP/PNP matched double transistors

Features * Current gain matching * Base-emitter voltage matching * Drop-in replacement for standard double transistors

PNP/PNP matched double transistors

PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. • Current gain matching\n• Base-emitter voltage matching\n• Drop-in replacement for standard double transistors\n• AEC-Q101 qualified;

Dual PNP, 45V, 0.1A, SOT563

• BVCEO > -45V;

丝印代码：1U5；45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT563

Features  BVCEO > -45V  IC = -100mA High Collector Current  Pair of PNP Transistors That Are Intrinsically Matched (Note 1)  2 Matching on Current Gain (hFE)  2mV Matching on Base-Emitter Voltage (VBE)  Fully Internally Isolated in a Small Surface Mount Package  Totally Lead-Free & F

PNP/PNP matched double transistors

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45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT563

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PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of