PNP/PNP matched double transistors

丝印代码：A9；PNP/PNP matched double transistors

Features * Current gain matching * Base-emitter voltage matching * Drop-in replacement for standard double transistors

45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363

Features • BVCEO > -45V • IC = -100mA High Collector Current • Pair of PNP Transistors That Are Intrinsically Matched (Note 1) • 10 Matching on Current Gain (hFE) • 2mV Matching on Base-Emitter Voltage (VBE) • Fully Internally Isolated in a Small Surface Mount Package • Totally Lead-Free &

PNP matched double transistor

General description NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Features ■ Current gain matching ■ Base-emitter voltage matching ■ Drop-in replacement for standard double transistors Applications ■

NPN/NPN matched double transistors

General description NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Features ■ Current gain matching ■ Base-emitter voltage matching ■ Drop-in replacement for standard double transistors Applications ■

Dual PNP, 45V, 0.1A, SOT363

BVCEO > -45V\nIC = -100mA High Collector Current\nPair of PNP Transistors That Are Intrinsically Matched\n10% Matching on Current Gain (hFE) \n2mV Matching on Base-Emitter Voltage (VBE)\nFully Internally Isolated in a Small Surface Mount Package\nTotally Lead-Free & Fully RoHS compliant\nHalogen;

PNP/PNP matched double transistors

PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. • Current gain matching\n• Base-emitter voltage matching\n• Drop-in replacement for standard double transistors\n• AEC-Q101 qualified;

Low VCEsat (BISS) transistors

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丝印代码：M3W；45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363

Features • BVCEO > -45V • IC = -100mA High Collector Current • Pair of PNP Transistors That Are Intrinsically Matched (Note 1) • 10 Matching on Current Gain (hFE) • 2mV Matching on Base-Emitter Voltage (VBE) • Fully Internally Isolated in a Small Surface Mount Package • Totally Lead-Free &

丝印代码：7B；45 V, 100 mA PNP/PNP matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

丝印代码：7B；45 V, 100 mA PNP/PNP matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

45 V, 100 mA PNP/PNP matched double transistor

PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: BCM847BSH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Current gain matching\n• Base-emitter voltage matching\n• Drop-in replacement for standard double transistors\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified accord;

丝印代码：A9；PNP/PNP matched double transistor

1. General description PNP/PNP matched double transistor in a very small Surface-Mounted Device (SMD) SOT363 (SC-88) plastic package. The transistors are fully isolated internally. 2. Features and benefits • Current gain matching • Base-emitter voltage matching • Drop-in replacement for st

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：管件 描述：TRANS 2NPN 45V 0.1A 6TSSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：管件 描述：TRANS 2NPN 45V 0.1A 6TSSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of