SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869 PARTMARKING DETAILS– BC868 - CAC BC868-16 - CCC

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complement: BC869. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

NPN medium power Transistor

FEATURES ● Two current gain selections. ● High current. APPLICATIONS ● General purpose switching and amplification. ● Power applications such as audio output stages. ● Complememt to BC869.

TRANSISTOR (NPN)

FEATURES ● High current ● Low voltage

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 20V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.6V(Max) @IC= 2.0A APPLICATIONS · MOSFET drivers · Power management · Battery-driven devices

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High current ● Low voltage

NPN Medium Power Transistor

Features ● High current ● Two current gain selections ● 1.2 W total power dissipation.

丝印代码：CBC；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES High current Low voltage

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low voltage, high current, Complementary to BC869. Applications General purpose switching and amplification, such as audio output stages.

丝印代码：CAC；Plastic-Encapsulate NPN Transistors

FEATURES • High current：1A • PD Power Dissipation:500mW

丝印代码：CAC；20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

NPN medium power transistor;

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High current ● Low voltage

丝印代码：5J；NPN Transistor

Features ● Low saturation voltage ● Excellent current-to-gain characteristics

20 V, 2 A NPN medium power transistor

NPN medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: BC869. • High current\n• Two current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

NPN medium power transistor 20 V, 1 A

20 V, 2 A NPN medium power transistors

文件：1.18878 Mbytes Page：23 Pages

0.5W NPN Medium Power Transistors

Features • High current • Low voltage • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

丝印代码：CBC；Plastic-Encapsulate NPN Transistors

FEATURES • High current：1A • PD Power Dissipation:500mW

丝印代码：CCC；Plastic-Encapsulate NPN Transistors

FEATURES • High current：1A • PD Power Dissipation:500mW

0.5W NPN Medium Power Transistors

Features • High current • Low voltage • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869 PARTMARKING DETAILS– BC868 - CAC BC868-16 - CCC

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complement: BC869. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

0.5W NPN Medium Power Transistors

Features • High current • Low voltage • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

丝印代码：CDC；Plastic-Encapsulate NPN Transistors

FEATURES • High current：1A • PD Power Dissipation:500mW

丝印代码：CDC；20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

NPN Medium Power Transistor

Features ● High current ● Two current gain selections ● 1.2 W total power dissipation.

NPN medium power transistor;

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869 PARTMARKING DETAILS– BC868 - CAC BC868-16 - CCC

丝印代码：CDC；20 V, 2 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869 PARTMARKING DETAILS– BC868 - CAC BC868-16 - CCC

丝印代码：CAC；20 V, 2 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

20 V, 2 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

NPN Medium Power Transistors 0.5W

文件：376.09 Kbytes Page：3 Pages

NPN Medium Power Transistors 0.5W

文件：376.09 Kbytes Page：3 Pages

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

中等功率双极型晶体管

NPN Medium Power Transistors 0.5W

文件：376.09 Kbytes Page：3 Pages

NPN Medium Power Transistors 0.5W

文件：376.09 Kbytes Page：3 Pages

20 V, 2 A NPN medium power transistors

文件：1.18878 Mbytes Page：23 Pages

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 20V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

Regulated, Adjustable -2x Inverting Charge Pump

General Description The MAX868 inverting charge pump provides a low-cost and compact means of generating a regulated negative voltage up to -2 x VIN from a positive input voltage between 1.8V and 5.5V. It uses a pulse-frequencymodulation (PFM) control scheme to generate the regulated negative out

Regulated, Adjustable -2x Inverting Charge Pump

General Description The MAX868 inverting charge pump provides a low-cost and compact means of generating a regulated negative voltage up to -2 x VIN from a positive input voltage between 1.8V and 5.5V. It uses a pulse-frequencymodulation (PFM) control scheme to generate the regulated negative out

Quadruple ESD transient voltage suppressor

文件：149.06 Kbytes Page：10 Pages