Switching and Amplifier Applications

Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 BC850

丝印代码：3Ls；PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846, BC847, BC848, BC849, BC850 (NPN)

丝印代码：3Ls；PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847 -BC850 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: PLEASE SEE MARKING CODE T

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Complementary NPN Types: BC846 – BC848 ● For Switching and AF Amplifier Applications ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. Green Device (Note 3) ● Qualified to AEC-Q101 Standards for H

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary NPN Types Available (BC846-BC848) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packagin

PNP Small Signal Transistor 310mW

Features ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Epoxy meets UL 94 V-0 flammability rating ● Moisure Sensitivity Level 1 ● Ideally Suited for Automatic Insertion ● 150°C Junction Temperature ● For Switching and AF Amplifier Appli

0.2 Watts PNP Plastic-Encapsulate Transistors

Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant ◇ Green compound (Halogen free) with suffix G on packing code and prefix G on date code

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon P/b Lead(Pb)-Free

PNP Dual General Purpose Transistors

PNP Dual General Purpose Transistors Pb Lead(Pb)-Free

NPN general purpose Transistor

FEATURES ● Low current.(max.100mA). ● Low voltage APPLICATIONS ● General purpose switching and amplification.

TRANSISTOR (PNP)

FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

PNP Transistor

Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications

丝印代码：3L；Low current.(max.100mA)

FEATURES ● Low current.(max.100mA) ● Low voltage.(max.65v) APPLICATIONS ● General purpose switching and amplification.

丝印代码：3L；PNP general purpose Transistor

FEATURES ● Low current.(max.100mA) ● Low voltage.(max.65v) APPLICATIONS ● General purpose switching and amplification.

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE 65/45/30 Volts POWER 225 mW FEATURES • General Purpose Amplifier Applications • NPN Epitaxial Silicon, Planar Design • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series • In compliance with EU RoHS 2002/95/EC directives

BC856A

FEATURES ● General Purpose Transistor PNP Type ● Collect current : - 0.1A ● Operating Temp. : -55°C ~ +150 °C ● RoHS compliant product

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN)

SMD General Purpose Transistor (PNP)

SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

丝印代码：3L；PNP general purpose Transistor

FEATURES ● Low current.(max.100mA). ● Low voltage APPLICATIONS ● General purpose switching and amplification.

Ideally suited for automatic insertion

TRANSISTOR (PNP) FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

丝印代码：3K；PNP Transistors

■ Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications

Plastic-Encapsulate Transistors

FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types Available • For switching and AF Amplifier • RoHS compliant package

丝印代码：3L；Ideally suited for automatic insertion

FEATURE Ideally suited for automatic insertion For Switching and AF Amplifier Applications

General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

Plastic-Encapsulate Transistors

FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications

丝印代码：3L；SOT-23 Plastic-Encapsulate Transistors

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications

丝印代码：3L；SOT-23 Plastic-Encapsulate Transistors

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications

AF 通用晶体管

NPN硅AF晶体管 • 高电流增益\n• 30 Hz 至 15 kHz 之间的低噪声\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q1011 标准;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 0.1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：3G；PNP Silicon Epitaxial General Purpose Transistors

文件：1.77421 Mbytes Page：12 Pages

丝印代码：3L；PNP Plastic-Encapsulate Transistors

文件：1.37311 Mbytes Page：5 Pages

200mW, PNP Small Signal Transistor

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PNP general purpose Transistor

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PNP SMALL SIGNAL TRANSISTOR

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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件：456.27 Kbytes Page：2 Pages

丝印代码：3L；Ideally suited for automatic insertion

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PNP Small Signal Transistor310mW

文件：102.17 Kbytes Page：3 Pages

PNP Small Signal Transistor 310mW

文件：201.1 Kbytes Page：3 Pages

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

文件：119.84 Kbytes Page：4 Pages

SMD General Purpose PNP Transistors

文件：145.27 Kbytes Page：2 Pages

丝印代码：3Ls；PNP Silicon AF Transistor

文件：887.44 Kbytes Page：14 Pages

SURFACE MOUNT PNP SILICON TRANSISTOR

文件：331.07 Kbytes Page：2 Pages

SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Complementary NPN Types: BC846 – BC848 ● For Switching and AF Amplifier Applications ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. Green Device (Note 3) ● Qualified to AEC-Q101 Standards for H

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary NPN Types Available (BC846-BC848) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3)

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Dual General Purpose Transistors(PNP Duals)

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Dual General Purpose Transistors

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compli

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

General Purpose Transistor

General Purpose Transistor RoHS Device Halogen Free Features ​​​​​​​- Ideally suited for automatic insertion - Power dissipation PCM: 0.25W (@TA=25°C) - Low current.(max. 100mA) - Collector-base voltage VCBO: BC856 = -80V BC857 = -50V BC858 = -30V

GENERAL PURPOSE TRANSISTORS PNP SILICON

DESCRIPTION The BC856 857 858 859 A L BL/ CL are available in SOT 23 p ackage FEATURES ⚫ Moisture Sensitivity Level: 1 ⚫ ESD Rating Human Body Model: >4000 V Machine Model: >400 V ⚫ Availabl e in SOT 23 p ackage

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors PNP Silicon

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available