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型号 功能描述 生产厂家 企业 LOGO 操作
BC857U

PNP Silicon Transistor (General purpose application Switching application)

Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847U

AUK

BC857U

General purpose application

Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847U

KODENSHI

可天士

BC857U

General Purpose Transistor

General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requir

FS

BC857U

Small Signal Transistors

AUK

PNP Silicon Transistor

Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847UF

KODENSHI

可天士

PNP Silicon Transistor (General purpose application Switching application)

Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847UF

AUK

Small Signal Transistors

AUK

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

PHILIPS

飞利浦

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

MOTOROLA

摩托罗拉

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

BC857U产品属性

  • 类型

    描述

  • Classifacation:

    Single type

  • VCEO [V]:

    -45

  • IC[mA]:

    -100

  • PC[mW]:

    200

  • hFE_Min:

    110

  • hFE_Max:

    800

  • hFE@ VCE [V]:

    -5

  • hFE@ IC[mA]:

    -2

  • VCE(sat) [V]@ IC[mA]:

    -100

  • VCE(sat) [V]@ IB[mA]:

    -5

  • fT[MHz]_Typ:

    150

  • fT[MHz]@ VCE [V]:

    -5

  • fT[MHz]@ IC[mA]:

    -10

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