PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package

PNP Silicon AF Transistor Array

PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see package information

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Double-Transistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Multi-Chip General Purpose Amplifier

PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68.

Multi-Chip Transistor

Features Power dissipation PCM : 0.3 W (Tamp.= 25 °C) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -50 V Operating & Storage junction Temperature Tj, Tstg : -55 °C~ +150 °C

PNP Plastic-Encapsulate Transistors 300mW

Features • Halogen free available upon request by adding suffix -HF • Multi-chip Transistor • Ultra-Small Surface Mount Package • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity L

Multi-Chip TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ,Tstg: -55℃to +150℃

Dual PNP Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available BC847S. ● Ultra-small surface mount package. APPLICATIONS ● For Low power amplification and switching.

PNP Transistors

■ Features ● High current gain ● Low collector-emitter saturation voltage ● For AF input stages and driver applications

DUAL TRANSISTOR (PNPPNP)

DUAL TRANSISTOR (PNP+PNP) FEATURES ● Two transistors in one package ● Reduces number of components and board space ● No mutual interference between the transistors

Power dissipation, plastic case, Weight approx

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Dual PNP Small Signal Surface Mount Transistor

FEATURES © Epitaxial planar die construction. © Complementary NPN type available o Ultra-small surface mount package. APPLICATIONS © For Low power amplification and switching.

BC857S: PNP Multi-Chip General Purpose Amplifier

SMD General Purpose PNP Transistors

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PNP Silicon AF Transistor Arrays

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SMD General Purpose PNP Transistors

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Surface Mount General Purpose Si-Epi-Planar Double-Transistors

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PNP Silicon AF Transistor Arrays

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PNP Transistors

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PNP Silicon

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SMD General Purpose PNP Transistors

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Bipolar Transistors

857 Series High Temp Card Edge Connector | Black | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator

Features 0.156 (3.96mm) Contact Spacing by 0.200 (5.08mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, 0.473 (12.01mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configuratio

General Purpose Transistor

Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified.

General Purpose Transistor

Features - For AF input stages and driver applications. - High current gain. - Low collector-emitter saturation voltage. - Low noise between 30Hz and 15kHz. - AEC-Q101 Qualified.

General Purpose Transistor

Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified.

boxes and ancillary products

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