PNP Multi-Chip General Purpose Amplifier

PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68.

PNP Silicon AF Transistor Array

PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see package information

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Double-Transistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Plastic-Encapsulate Transistors 300mW

Features • Halogen free available upon request by adding suffix -HF • Multi-chip Transistor • Ultra-Small Surface Mount Package • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity L

Dual PNP Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available BC847S. ● Ultra-small surface mount package. APPLICATIONS ● For Low power amplification and switching.

Multi-Chip TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ,Tstg: -55℃to +150℃

DUAL TRANSISTOR (PNPPNP)

DUAL TRANSISTOR (PNP+PNP) FEATURES ● Two transistors in one package ● Reduces number of components and board space ● No mutual interference between the transistors

PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package

Power dissipation, plastic case, Weight approx

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Dual PNP Small Signal Surface Mount Transistor

FEATURES © Epitaxial planar die construction. © Complementary NPN type available o Ultra-small surface mount package. APPLICATIONS © For Low power amplification and switching.

BC857S: PNP Multi-Chip General Purpose Amplifier

该器件设计用于集电极电流达到200mA时的通用放大器应用。 采用工艺68设计。

丝印代码：3C；PNP Transistors

■ Features ● High current gain ● Low collector-emitter saturation voltage ● For AF input stages and driver applications

Multi-Chip Transistor

Features Power dissipation PCM : 0.3 W (Tamp.= 25 °C) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -50 V Operating & Storage junction Temperature Tj, Tstg : -55 °C~ +150 °C

Surface Mount General Purpose Si-Epi-Planar Double-Transistors

文件：108.83 Kbytes Page：2 Pages

SMD General Purpose PNP Transistors

文件：179.68 Kbytes Page：2 Pages

SMD General Purpose PNP Transistors

文件：180.47 Kbytes Page：2 Pages

PNP Silicon AF Transistor Arrays

文件：849.35 Kbytes Page：10 Pages

丝印代码：3Ds；PNP Silicon AF Transistor Arrays

文件：854.75 Kbytes Page：10 Pages

PNP Transistors

文件：1.35172 Mbytes Page：3 Pages

PNP Silicon

文件：851.49 Kbytes Page：2 Pages

Bipolar Transistors

SMD General Purpose PNP Transistors

文件：180.47 Kbytes Page：2 Pages

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of