PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package

PNP Silicon AF Transistor Array

PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see package information

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Double-Transistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Multi-Chip General Purpose Amplifier

PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68.

Multi-Chip Transistor

Features Power dissipation PCM : 0.3 W (Tamp.= 25 °C) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -50 V Operating & Storage junction Temperature Tj, Tstg : -55 °C~ +150 °C

PNP Plastic-Encapsulate Transistors 300mW

Features • Halogen free available upon request by adding suffix -HF • Multi-chip Transistor • Ultra-Small Surface Mount Package • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity L

Multi-Chip TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ,Tstg: -55℃to +150℃

Dual PNP Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available BC847S. ● Ultra-small surface mount package. APPLICATIONS ● For Low power amplification and switching.

丝印代码：3C；PNP Transistors

■ Features ● High current gain ● Low collector-emitter saturation voltage ● For AF input stages and driver applications

Power dissipation, plastic case, Weight approx

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Dual PNP Small Signal Surface Mount Transistor

FEATURES © Epitaxial planar die construction. © Complementary NPN type available o Ultra-small surface mount package. APPLICATIONS © For Low power amplification and switching.

DUAL TRANSISTOR (PNPPNP)

DUAL TRANSISTOR (PNP+PNP) FEATURES ● Two transistors in one package ● Reduces number of components and board space ● No mutual interference between the transistors

SMD General Purpose PNP Transistors

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BC857S: PNP Multi-Chip General Purpose Amplifier

丝印代码：3Ds；PNP Silicon AF Transistor Arrays

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SMD General Purpose PNP Transistors

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Surface Mount General Purpose Si-Epi-Planar Double-Transistors

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PNP Silicon AF Transistor Arrays

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PNP Transistors

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PNP Silicon

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SMD General Purpose PNP Transistors

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Bipolar Transistors

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of