| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BC857M | PNP general purpose transistors DESCRIPTION PNP general purpose transistor in a SOT883 leadless ultra small plastic package. NPN complement: BC847M series. FEATURES • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Board space 1.3 × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS • General pu | PHILIPS 飞利浦 | ||
BC857M | PNP general purpose transistors | ETC 知名厂家 | ETC | |
BC857M | PNP general purpose transistors FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23. | NEXPERIA 安世 | ||
PNP general purpose transistors FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23. APPLICATIONS •General purpose small signal DC •Low and medium frequency AC applications •Mobile communications, digital (still) cameras, PDAs, PCMCIA car | NEXPERIA 安世 | |||
PNP general purpose transistors FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23. | NEXPERIA 安世 | |||
PNP general purpose transistors DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching | PHILIPS 飞利浦 | |||
NPN SILICON RF POWER TRANSISTOR The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2. | MOTOROLA 摩托罗拉 | |||
Integrated Circuit Low-Noise JFET-Input Operational Amplifier Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of | NTE | |||
Integrated Circuit Low-Noise JFET-Input Operational Amplifier Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of | NTE | |||
Integrated Circuit Low-Noise JFET-Input Operational Amplifier Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of | NTE |
BC857M芯片相关品牌
BC857M规格书下载地址
BC857M参数引脚图相关
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- c3055
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- BC858CF
- BC858C
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- BC858A
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- BC857-X-AE3-R
- BC857W-Q
- BC857W
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- BC857BT
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- BC857BM
- BC857BF
- BC857B
- BC857AW
- BC857AT
- BC857AQ
- BC857AM
BC857M数据表相关新闻
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DdatasheetPDF页码索引
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