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型号 功能描述 生产厂家 企业 LOGO 操作
BC857M

PNP general purpose transistors

DESCRIPTION PNP general purpose transistor in a SOT883 leadless ultra small plastic package. NPN complement: BC847M series. FEATURES • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Board space 1.3 × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS • General pu

PHILIPS

飞利浦

BC857M

PNP general purpose transistors

ETC

知名厂家

BC857M

PNP general purpose transistors

FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23.

NEXPERIA

安世

PNP general purpose transistors

FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23. APPLICATIONS •General purpose small signal DC •Low and medium frequency AC applications •Mobile communications, digital (still) cameras, PDAs, PCMCIA car

NEXPERIA

安世

PNP general purpose transistors

FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23.

NEXPERIA

安世

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

PHILIPS

飞利浦

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

MOTOROLA

摩托罗拉

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

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