45 V, 100 mA NPN general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

丝印代码：010001；45 V, 100 mA PNP general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

45 V, 100 mA PNP general-purpose transistors

PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads.\nTable 1. Product overview Type Number\n Package\n NPN complement\n Nexperia\n JEITA\n JEDEC\n BC857AQA\n DFN1010 • General-purpose transistors\n• Three current gain selections\n• Low package height of 0.37 mm\n• Suitable for Automatic Optical Inspection (AOI) of solder joint\n• AEC-Q101 qualified;

丝印代码：010001；45 V, 100 mA PNP general-purpose transistors

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封装/外壳：3-XDFN 裸露焊盘 包装：散装 描述：TRANS PNP 45V 0.1A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of