45 V, 100 mA NPN general-purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

PNP general purpose transistors

DESCRIPTION PNP general purpose transistor in a SOT883 leadless ultra small plastic package. NPN complement: BC847M series. FEATURES • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Board space 1.3 × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS • General pu

45 V, 100 mA NPN general-purpose transistors

Features and benefits • General-purpose transistors • SMD plastic packages • Three different gain selections • AEC-Q101 qualified

丝印代码：D3；PNP general purpose transistors

FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23.

PNP general purpose transistors

丝印代码：D3；PNP general purpose transistors

FEATURES •Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) •Board space 1.3 × 0.9 mm •Power dissipation comparable to SOT23. APPLICATIONS •General purpose small signal DC •Low and medium frequency AC applications •Mobile communications, digital (still) cameras, PDAs, PCMCIA car

PNP general purpose transistors

PNP general purpose transistor in a SOT883 leadless ultra small plastic package. Nexperia complement: BC847M series. • Leadless ultra small plastic package (1 mm x 0.6 mm x 0.5 mm)\n• Board space 1.3 x 0.9 mm\n• Power dissipation comparable to SOT23.\n• AEC-Q101 qualified;

45 V, 100 mA PNP general-purpose transistors

PNP general-purpose transistors in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. • Leadless ultra small SMD plastic package\n• Power dissipation comparable to SOT23\n• Low package height of 0.37 mm\n• AEC-Q101 qualified;

45 V, 100 mA NPN general-purpose transistors

Features and benefits  Leadless ultra small SMD plastic package  Power dissipation comparable to SOT23  Low package height of 0.37 mm  AEC-Q101 qualified

丝印代码：01000110；45 V, 100 mA PNP general-purpose transistors

Features and benefits  Leadless ultra small SMD plastic package  Power dissipation comparable to SOT23  Low package height of 0.37 mm  AEC-Q101 qualified

丝印代码：9BC；PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 BC850

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 0.1A SOT883 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：01000110；45 V, 100 mA PNP general-purpose transistors

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封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 0.1A DFN1006B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of