PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC846andBC847. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

SwitchingandAmplifierApplications

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

PNPGeneralPurposeAmplifier

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●ComplementaryNPNTypes:BC846–BC848 ●ForSwitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) ●QualifiedtoAEC-Q101StandardsforH

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

PNPSmallSignalTransistor310mW

Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivityLevel1 ●IdeallySuitedforAutomaticInsertion ●150°CJunctionTemperature ●ForSwitchingandAFAmplifierAppli

PNPSiliconAFTransistors

PNPSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagin

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846-BC848) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3)

PNPGENERALPURPOSETRANSISTORS

VOLTAGE65/45/30VoltsPOWER225mW FEATURES •GeneralPurposeAmplifierApplications •NPNEpitaxialSilicon,PlanarDesign •CollectorCurrentIC=-100mA •Complimentary(PNP)Devices:BC846/BC847/BC848/BC849Series •IncompliancewithEURoHS2002/95/ECdirectives

NPNgeneralpurposeTransistor

FEATURES ●Lowcurrent.(max.100mA). ●Lowvoltage.. APPLICATIONS ●Generalpurposeswitchingandamplification.

SMDGeneralPurposeTransistor(PNP)

SMDGeneralPurposeTransistor(PNP) Features •PNPSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications

0.2WattsPNPPlastic-EncapsulateTransistors

Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGon packingcodeandprefixGondatecode

PNPTransistor

Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

PNPGeneralPurposeTransistor

Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

PNPDualGeneralPurposeTransistors

PNPDualGeneralPurposeTransistors PbLead(Pb)-Free

BC856A

FEATURES ●GeneralPurposeTransistorPNPType ●Collectcurrent:-0.1A ●OperatingTemp.:-55°C~+150°C ●RoHScompliantproduct

TRANSISTOR(PNP)

FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

PNPgeneralpurposetransistors

Generaldescription PNPgeneral-purposetransistorsinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits •Lowcurrent(max.100mA) •Lowvoltage(max.65V) •AEC-Q101qualified Applications •General-purposeswitchingandamplification

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)

SURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBC856,BC857andBC858SeriestypesarePNPSiliconTransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. MARKINGCODE:PLEASESEEMARKINGCODET

Ideallysuitedforautomaticinsertion

TRANSISTOR(PNP) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

PNPTransistors

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

PNPSiliconAFTransistor

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30hzand15kHz •Complementarytypes: BC847...-BC850...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating –HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

PNPSiliconGeneralPurposeTransistors

FEATURES ●Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC−89packagewhichisdesignedforlowpowersurfacemountapplications. ●Pb−FreePackagesareAvailable ●MoistureSensitivityLevel1

PNPgeneralpurposeTransistor

FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification.

Lowcurrent.(max.100mA)

FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification.

Plastic-EncapsulateTransistors

FEATURES Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications

Plastic-EncapsulateTransistors

FEATURES Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications

PNPgeneralpurposeTransistor

FEATURES ●Lowcurrent.(max.100mA). ●Lowvoltage.. APPLICATIONS ●Generalpurposeswitchingandamplification.

EiceDRIVER™enhanced1EDI302xAS/1EDI303xASevaluationboard

TheEiceDRIVER™enhanced1EDI302xAS/1EDI303xASevaluationboardisaversatileevaluationplatformforthe EiceDRIVER™enhanced1EDI302xAS/1EDI303xASfamily.Itfeaturesahalfbridgeconfiguration,seeFigure1. ThereistheoptiontomounteithertheHybridPACK™DSCIGBTmoduleoradiscreteP

45V,100mANPNgeneral-purposetransistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Threedifferentgainselections

SOT-23Plastic-EncapsulateTransistors

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS PNP 45V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNPSiliconEpitaxialGeneralPurposeTransistors

文件：1.77421 Mbytes Page：12 Pages

Ideallysuitedforautomaticinsertion

文件：518.909 Kbytes Page：6 Pages

SMDGeneralPurposePNPTransistors

文件：145.27 Kbytes Page：2 Pages

Plastic-EncapsulatedMultipleTransistors??QuadSurfaceMount(Case751B-SO-16)??NPN/PNP)

文件：53.1 Kbytes Page：1 Pages

PNPPlastic-EncapsulateTransistors

文件：1.37311 Mbytes Page：5 Pages

200mW,PNPSmallSignalTransistor

文件：323.06 Kbytes Page：6 Pages

PNPSiliconAFTransistor

文件：887.44 Kbytes Page：14 Pages

PNPgeneralpurposeTransistor

文件：247.13 Kbytes Page：6 Pages

SURFACEMOUNTPNPSILICONTRANSISTOR

文件：331.07 Kbytes Page：2 Pages

PNPSmallSignalTransistor310mW

文件：201.1 Kbytes Page：3 Pages

SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP)

文件：456.42 Kbytes Page：2 Pages

PNPSmallSignalTransistor310mW

文件：102.17 Kbytes Page：3 Pages

SOT23PNPSILICONPLANARGENERALPURPOSETRANSISTORS

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●ComplementaryNPNTypes:BC846–BC848 ●ForSwitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) ●QualifiedtoAEC-Q101StandardsforH

Plastic-EncapsulateTransistors

FEATURES Twotransistorsinonepackage Reducesnumberofcomponentsandboardspace Nomutualinterferencebetweenthetransistors

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC856BDW1T1=3B BC857BDW1T1=3F BC857CDW1T1=3G

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

DualGeneralPurposeTransistors(PNPDuals)

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. NPNcomplements:BC846F,BC847FandBC848Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching

GeneralPurposeTransistor

GeneralPurposeTransistor RoHSDevice HalogenFree Features ​​​​​​​-Ideallysuitedforautomaticinsertion -Powerdissipation PCM:0.25W(@TA=25°C) -Lowcurrent.(max.100mA) -Collector-basevoltage VCBO:BC856=-80V BC857=-50V BC858=-30V

GENERALPURPOSETRANSISTORSPNPSILICON

DESCRIPTION The BC856857858859ALBL/CLareavailablein SOT23package FEATURES ⚫MoistureSensitivityLevel:1 ⚫ESDRatingHumanBodyModel:>4000V MachineModel:>400 V ⚫AvailableinSOT23package

CASE318-08,STYLE6SOT-23(TO-236AB)

GeneralPurposeTransistors PNPSilicon

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon Features •Pb−FreePackagesareAvailable