GENERAL PURPOSE TRANSISTORS PNP SILICON

DESCRIPTION The BC856 857 858 859 A L BL/ CL are available in SOT 23 p ackage FEATURES ⚫ Moisture Sensitivity Level: 1 ⚫ ESD Rating Human Body Model: >4000 V Machine Model: >400 V ⚫ Availabl e in SOT 23 p ackage

PNP 双极晶体管

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications. • Pb-Free Packages are Available\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable;

丝印代码：3F；PNP Silicon AF Transistors

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846...-BC850... (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

丝印代码：3F；PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > -45V • IC = -100mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary NPN Type BC847BLP • Totally Lead-Free & Fully RoHS Compliant (Notes 1

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > -45V • IC = -100mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.4mm Height Package Minimizing Off-Board Profile • Complementary NPN Type BC847BLP4 • Totally Lead-Free & Fully RoHS Compliant (Notes

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > -45V • IC = -100mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.4mm Height Package Minimizing Off-Board Profile • Complementary NPN Type BC847BLP4 • Totally Lead-Free & Fully RoHS Compliant (Notes

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • BVCEO > -45V • IC = -100mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary NPN Type BC847BLP • Totally Lead-Free & Fully RoHS Compliant (Notes 1

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors PNP Silicon

丝印代码：3F；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available

丝印代码：3F；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

丝印代码：3F；PNP Silicon AF Transistor

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封装/外壳：SC-101，SOT-883 包装：散装 描述：TRANS PNP 45V 0.1A DFN1006-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：136.16 Kbytes Page：3 Pages

50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：95.96 Kbytes Page：4 Pages

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：136.16 Kbytes Page：3 Pages

50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：95.96 Kbytes Page：4 Pages

45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006

文件：386.2 Kbytes Page：5 Pages

45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：145.45 Kbytes Page：5 Pages

PNP, 45V, 0.1A, DFN1006-3

45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：145.45 Kbytes Page：5 Pages

45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006

文件：240.1 Kbytes Page：5 Pages

45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：145.45 Kbytes Page：5 Pages

封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 0.1A 3DFN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：145.45 Kbytes Page：5 Pages

PNP, 45V, 0.1A, DFN1006-3

50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：95.96 Kbytes Page：4 Pages

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：136.16 Kbytes Page：3 Pages

50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：95.96 Kbytes Page：4 Pages

General Purpose Transistors

文件：154.41 Kbytes Page：7 Pages

General Purpose Transistors

文件：154.41 Kbytes Page：7 Pages

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of