PNP general purpose double transistor

DESCRIPTION PNP double transistor in an SC-88 (SOT363) plastic six lead package. FEATURES • Two transistors in one package • Reduces number of components and board space • No mutual interference between the transistors. APPLICATIONS • General purpose switching and smal

PNP Silicon AF Transistor Array

PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see package information

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Double-Transistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Plastic-Encapsulate Transistors 200mW

Features • Halogen free available upon request by adding suffix -HF • Multi-chip Transistor • Ultra-Small Surface Mount Package • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivi

65 V, 100 mA PNP/PNP general-purpose transistor

DUAL TRANSISTOR (PNPPNP)

DUAL TRANSISTOR (PNP+PNP) FEATURES • Two transistors in one package • Reduces number of components and board space • No mutual interference between the transistors

PNP General Purpose Double Transistor

Features • Two transistors in one package • Reduces number of components and board space • No mutual interference between the transistors.

PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package

丝印代码：3D；PNP general purpose Transistor

FEATURES ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Non-Halogen ● Two ( galvanic) internal isolated Transistors with good matching in one package APPLICATIONS ● General purpose switching and amplification.

丝印代码：5Ft；SOT-363 Plastic-Encapsulate Transistors

FEATURES e Two transistors in one package e Reduces number of components and board space e No mutual interference between the transistors

Power dissipation, plastic case, Weight approx

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 300 mW • Plastic case SOT-363 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

丝印代码：5F；65 V, 100 mA PNP/PNP general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors

65 V, 100 mA PNP/PNP general-purpose transistor

PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• AEC-Q101 qualified;

AF 通用晶体管

NPN 硅 AF 晶体管阵列 • 适用于 AF 输入级和驱动器应用\n• 低集电极-发射极饱和电压\n• BC856S / U、BC857S：有关卷轴方向，请参见下面的封装信息\n• 符合 AEC Q101 要求;

Dual Digital Transistors (PNPPNP)

文件：1.66334 Mbytes Page：4 Pages

PNP Silicon AF Transistor Arrays

文件：849.35 Kbytes Page：10 Pages

丝印代码：3Ds；PNP Silicon AF Transistor Arrays

文件：854.75 Kbytes Page：10 Pages

SMD General Purpose PNP Transistors

文件：179.68 Kbytes Page：2 Pages

SMD General Purpose PNP Transistors

文件：180.47 Kbytes Page：2 Pages

Surface Mount General Purpose Si-Epi-Planar Double-Transistors

文件：108.83 Kbytes Page：2 Pages

丝印代码：7F；65 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C

丝印代码：7F；65 V, 100 mA PNP/PNP general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

65 V, 100 mA PNP/PNP general-purpose double transistor

PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: BC846SH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended f;

丝印代码：5F；65 V, 100 mA PNP/PNP general-purpose transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • Qualified according to AEC-Q101 and recommended for use in automotive

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：管件 描述：TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：管件 描述：TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

Surface Mount General Purpose Si-Epi-Planar Double-Transistors

文件：108.83 Kbytes Page：2 Pages

PNP Silicon AF Transistor Arrays

文件：849.35 Kbytes Page：10 Pages

SMD General Purpose PNP Transistors

文件：180.47 Kbytes Page：2 Pages

PNP Silicon AF Transistor Arrays

文件：854.75 Kbytes Page：10 Pages

SMD General Purpose PNP Transistors

文件：179.68 Kbytes Page：2 Pages

SMD General Purpose PNP Transistors

文件：180.47 Kbytes Page：2 Pages

丝印代码：3D-；PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846 and BC847. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

PNP general purpose transistors

DESCRIPTION PNP transistor in an SC-75 plastic package. NPN complements: BC846T and BC847T. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification especially in portable equipment.

SOFT RECOVERU, FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 3.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Void-free molded plastic package • Exceeds environmental standards of MIL-S-19500/228 • Fast switching for high efficiency. • In

Integrated Circuit TV Video Modulation Circuit

Description: The NTE856 is an RF oscillator and dual–input modulator in an 8–Lead DIP type package designed to generate a TV signal from baseband video inputs. Typical applications include video games, home computer display, video recorders, and test equipment. The very low level of intermodulat