BC856B价格

参考价格:¥0.1237

型号:BC856B 品牌:Taiwan Semi 备注:这里有BC856B多少钱,2024年最近7天走势,今日出价,今日竞价,BC856B批发/采购报价,BC856B行情走势销售排行榜,BC856B报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BC856B

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC846andBC847. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BC856B

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

TRSYS

Transys Electronics

TRSYS
BC856B

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)

SIEMENS

Siemens Ltd

SIEMENS
BC856B

SwitchingandAmplifierApplications

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BC856B

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●ComplementaryNPNTypes:BC846–BC848 ●ForSwitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) ●QualifiedtoAEC-Q101StandardsforH

DIODESDiodes Incorporated

达尔科技

DIODES
BC856B

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagin

DiotecDIOTEC

德欧泰克

Diotec
BC856B

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
BC856B

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846-BC848) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES
BC856B

NPNgeneralpurposeTransistor

FEATURES ●Lowcurrent.(max.100mA). ●Lowvoltage.. APPLICATIONS ●Generalpurposeswitchingandamplification.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BC856B

0.2WattsPNPPlastic-EncapsulateTransistors

Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGon packingcodeandprefixGondatecode

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
BC856B

PNPGENERALPURPOSETRANSISTORS

VOLTAGE65/45/30VoltsPOWER225mW FEATURES •GeneralPurposeAmplifierApplications •NPNEpitaxialSilicon,PlanarDesign •CollectorCurrentIC=-100mA •Complimentary(PNP)Devices:BC846/BC847/BC848/BC849Series •IncompliancewithEURoHS2002/95/ECdirectives

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BC856B

PNPDualGeneralPurposeTransistors

PNPDualGeneralPurposeTransistors PbLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
BC856B

PNPGeneralPurposeTransistor

Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BC856B

SMDGeneralPurposeTransistor(PNP)

SMDGeneralPurposeTransistor(PNP) Features •PNPSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications

TAITRON

TAITRON

TAITRON
BC856B

PNPgeneralpurposetransistors

Generaldescription PNPgeneral-purposetransistorsinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits •Lowcurrent(max.100mA) •Lowvoltage(max.65V) •AEC-Q101qualified Applications •General-purposeswitchingandamplification

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BC856B

PNPTransistor

Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BC856B

BC856A

FEATURES ●GeneralPurposeTransistorPNPType ●Collectcurrent:-0.1A ●OperatingTemp.:-55°C~+150°C ●RoHScompliantproduct

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BC856B

PNPSiliconAFTransistors

PNPSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC856B

SURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBC856,BC857andBC858SeriestypesarePNPSiliconTransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. MARKINGCODE:PLEASESEEMARKINGCODET

CentralCentral Semiconductor Corp

美国中央半导体

Central
BC856B

TRANSISTOR(PNP)

FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
BC856B

PNPSmallSignalTransistor310mW

Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivityLevel1 ●IdeallySuitedforAutomaticInsertion ●150°CJunctionTemperature ●ForSwitchingandAFAmplifierAppli

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BC856B

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating –HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
BC856B

Plastic-EncapsulateTransistors

FEATURES Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications

OLITECH

Olitech Electronics Co.Ltd

OLITECH
BC856B

PNPSURFACEMOUNTSMALLSIGNALTRANSISTORINSOT23

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable •ForswitchingandAFAmplifier •RoHScompliantpackage

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

BWTECH
BC856B

Plastic-EncapsulateTransistors

FEATURES Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
BC856B

PNPgeneralpurposeTransistor

FEATURES ●Lowcurrent.(max.100mA). ●Lowvoltage.. APPLICATIONS ●Generalpurposeswitchingandamplification.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BC856B

PNPTransistors

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
BC856B

GeneralPurposeTransistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC−70/SOT−323whichisdesignedforlowpowersurfacemountapplications. Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BC856B

Ideallysuitedforautomaticinsertion

TRANSISTOR(PNP) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BC856B

PNPgeneralpurposeTransistor

FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
BC856B

Lowcurrent.(max.100mA)

FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
BC856B

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackage •Twodifferentgainselections

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BC856B

SOT-23Plastic-EncapsulateTransistors

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications

UMWUMW

友台友台半导体

UMW
BC856B

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS PNP 65V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Yangzhou Yangjie Electronic Technology Co.,Ltd

Yangzhou Yangjie Electronic Technology Co.,Ltd

Yangzhou Yangjie Electronic Technology Co.,Ltd
BC856B

PNPSiliconEpitaxialGeneralPurposeTransistors

文件:1.77421 Mbytes Page:12 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER
BC856B

PNPgeneralpurposeTransistor

文件:247.13 Kbytes Page:6 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BC856B

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
BC856B

Ideallysuitedforautomaticinsertion

文件:518.909 Kbytes Page:6 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON
BC856B

SMDGeneralPurposePNPTransistors

文件:145.27 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
BC856B

PNPPlastic-EncapsulateTransistors

文件:1.37311 Mbytes Page:5 Pages

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
BC856B

200mW,PNPSmallSignalTransistor

文件:323.06 Kbytes Page:6 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
BC856B

PNPSmallSignalTransistor200mW

文件:521.809 Kbytes Page:5 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BC856B

SURFACEMOUNTPNPSILICONTRANSISTOR

文件:331.07 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
BC856B

PNPSmallSignalTransistor310mW

文件:102.17 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BC856B

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

文件:119.84 Kbytes Page:4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
BC856B

PNPSmallSignalTransistor310mW

文件:201.1 Kbytes Page:3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BC856B

PNPSiliconAFTransistor

文件:887.44 Kbytes Page:14 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC856B

SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP)

文件:456.6 Kbytes Page:2 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC846andBC847. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●ComplementaryNPNTypes:BC846–BC848 ●ForSwitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) ●QualifiedtoAEC-Q101StandardsforH

DIODESDiodes Incorporated

达尔科技

DIODES

PNPDualGeneralPurposeTransistors

PNPDualGeneralPurposeTransistors PbLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

SOT-363Plastic-EncapsulateTransistors

FEATURES eTwotransistorsinonepackage eReducesnumberofcomponentsandboardspace eNomutualinterferencebetweenthetransistors

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualGeneralPurposeTransistors(PNPDuals)

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

ETL

E-Tech Electronics LTD

ETL

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC856BDW1T1=3B BC857BDW1T1=3F BC857CDW1T1=3G

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC856BDW1T1=3B BC857BDW1T1=3F BC857CDW1T1=3G

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC856B产品属性

  • 类型

    描述

  • 型号

    BC856B

  • 功能描述

    两极晶体管 - BJT Transistor 200mW

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-5-1 20:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
23+
NA
30000
房间原装现货特价热卖,有单详谈
PHILIPS/飞利浦
22+
SOT-23
100000
代理渠道/只做原装/可含税
ON(安森美)
23+
NA/
8735
原厂直销,现货供应,账期支持!
AUK
24+
SOT-23
98000
全新原厂原装正品现货,可提供技术支持、样品免费!
ON
23+
SOT323
18689
NXP
2020+
SOT-23
18800
绝对原装进口现货,假一赔十,价格优势!
INFINEON
23+
SOT323
20000
原厂原装正品现货
YONGYUTAI(永裕泰)
23+
SOT23
6000
NXP
21+
N/A
10000
只做原装
NXP
17+
SOT-23
9888
全新原装现货

BC856B芯片相关品牌

  • ARIES
  • Bourns
  • FERROXCUBE
  • Fuji
  • KOA
  • MEANWELL
  • PREDIP
  • RFE
  • SMC
  • TRUMPOWER
  • WPI
  • YANGJIE

BC856B数据表相关新闻