NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856W – BC858W • For Switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856W, BC857W, BC858W, BC859W, BC860W (PNP)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon Pb Lead(Pb)-Free

NPN GENERAL PURPOSE TRANSISTORS

FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above

NPN Plastic Encapsulate Transistor

FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

NPN Transistor

FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free)

NPN General Purpose Transistors

Features • Low current (max. 100mA) • Low voltage (max. 65V) • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

NPN, 30V, 0.1A, SOT323

NPN Plastic Encapsulate Transistor

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NPN Transistor

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SMD General Purpose NPN Transistors

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SMD General Purpose NPN Transistors

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丝印代码：2K；NPN Silicon Epitaxial General Purpose Transistors

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丝印代码：1J；NPN Silicon Epitaxial Planar Transistor

文件：446.64 Kbytes Page：5 Pages

NPN Silicon Epitaxial Planar Transistor

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NPN Silicon AF Transistors

文件：183.85 Kbytes Page：19 Pages

NPN General Purpose Transistors

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General Purpose Transistor

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NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

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Small Signal Transistor

Features - Power dissipation PCM: 0.15W (@TA=25°C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V

Small Signal Transistor

Features - Power dissipation PCM: 0.15W (@TA=25°C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846W=80V BC847W=50V BC848W=30V

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

CASE 419-02, STYLE 3 SOT-323/SC-70

General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

NPN General Purpose Transistors

Features • Low current (max. 100mA) • Low voltage (max. 65V) • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SMALL SIGNAL TRANSISTOR

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封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Small Signal Transistor

Small Signal Bipolar Transistors

丝印代码：1J；NPN General Purpose Amplifier

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NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Epitaxial Die Construction • Ideally Suited for Automatic Insertion • 310 mW Power Dissipation • Complementary PNP Types Available (BC856-BC858) • For Switching and AF Amplifier Applications

GENERAL PURPOSE TRANSISTOR NPN SILICON

General Purpose Transistor NPN Silicon

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

丝印代码：T106；NPN General Purpose Transistor

Features 1) BVCEO minimum is 30V (IC=1mA) 2) Complements the BC858B / BC858BW.

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching