NPN/PNP Silicon AF Transistor Array

NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101

AF 通用晶体管

846 Series High Temp Card Edge Connector | Green | 0.125 (3.175mm) Pitch | 0.250 (6.35mm) Row Spacing

Features .125 (3.175mm) Contact Spacing x .250 (6.35mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board High Profile Insulator Body, .600 (15.24mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configurations

Small Signal Transistor

Features - High current gain. - AEC-Q101 Qualified. - Excellent hFE linearity. - Low noise between 30Hz and 15kHz.

Small Signal Transistor

Features - High current gain. - AEC-Q101 Qualified. - Excellent hFE linearity. - Low noise between 30Hz and 15kHz.

Small Surface Mount Transistor

Features - Low collector capacitance. - Low collector-emitter saturation voltage. - Reduces number of components and board space. - AEC-Q101 Qualified. - No mutual interference between the transistors.

Small Signal Transistor

Features - High current gain. - AEC-Q101 Qualified. - Excellent hFE linearity. - Low noise between 30Hz and 15kHz.