丝印代码：7K；65 V, 100 mA NPN/NPN general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C

65 V, 100 mA NPN/NPN general-purpose double transistor

NPN/NPN general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BC856SH • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C;

NPN Silicon AF Transistor Arrays

NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see package info

丝印代码：7K；65 V, 100 mA NPN/NPN general-purpose double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and board space • No mutual interference between the transistors • High-temperature applications up to 175 °C • Qualified according to A

65 V, 100 mA NPN/NPN general-purpose double transistor

NPN/NPN general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BC856SH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Closely matched current gain\n• Reduces number of components and board space\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified according to AEC-Q101 and recommended f;

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

丝印代码：1B-；NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

NPN general purpose double transistor

DESCRIPTION NPN double transistor in an SC-88 (SOT363) plastic six lead package. FEATURES • Two transistors in one package • Reduces number of components and board space • No mutual interference between the transistors. APPLICATIONS • General purpose switching and small signal amplification

NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

Integrated Circuit TV Video Modulator

Description: The NTE846 is designed to interface color difference, audio, and luminance signals to the antenna terminals of a TV receiver. It consists of a sound subcarrier oscillator, chroma subcarrier oscillator, quatrature chroma modulators, and RF oscillators and modulators for two low–VHF ch