General Purpose Transistor NPN Duals

General Purpose Transistor NPN Duals

丝印代码：4Ft；SOT-363 Plastic-Encapsulate Transistors

FEATURES e Two transistors in one package e Reduces number of components and board space e No mutual interference between the transistors

丝印代码：4BT；Plastic-Encapsulate Transistors

FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

丝印代码：1B；NPN Silicon Epitaxial General Purpose Transistors

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65V,0.1A,General Purpose Dual NPN Bipolar Transistor

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features • Pb−Free Package is Avail

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S and NSV Prefixes for Automotive and Other Applications Requiri

General Purpose Transistor

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Dual General Purpose Transistors

文件：110.48 Kbytes Page：11 Pages

65 V, dual general purpose transistor

Transistors

Dual General Purpose Transistors

文件：110.48 Kbytes Page：11 Pages

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

丝印代码：1B-；NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

NPN general purpose double transistor

DESCRIPTION NPN double transistor in an SC-88 (SOT363) plastic six lead package. FEATURES • Two transistors in one package • Reduces number of components and board space • No mutual interference between the transistors. APPLICATIONS • General purpose switching and small signal amplification

NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

Integrated Circuit TV Video Modulator

Description: The NTE846 is designed to interface color difference, audio, and luminance signals to the antenna terminals of a TV receiver. It consists of a sound subcarrier oscillator, chroma subcarrier oscillator, quatrature chroma modulators, and RF oscillators and modulators for two low–VHF ch