NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types Available (BC856-BC858) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856 – BC858 • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for H

Plastic-Encapsulate Transistors

FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC857...-BC860...(PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

Small Signal Transistor

Features - Power dissipation PCM: 0.20W (@TA=25 °C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V - Operating and storage junction temperature range: TJ, TSTG= -65 to +150 °C

GENERAL PURPOSE TRANSISTORS NPN SILICON

DESCRIPTION The BC846 AL /BL A 8 4 7 8 4 8 A L / CL are available in SOT 23 p ackage. FEATURES ⚫ H ig h current gain ⚫ E xcellent h FE linearity ⚫ L ow noise between 30Hz and 15k H z ⚫ F or A F input stages and driver applications ⚫ Availabl e in SOT 23 p ackage A PPL ICATIONS ⚫ G e

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors NPN Silicon

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors NPN Silicon

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors NPN Silicon

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors NPN Silicon

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 ... BC860

DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY)

This device contains two electrically-isolated complimently pair (NPN and PNP) general-purpose transisotrs.This device is ideal for portable applications where board space is at a premium VOLTAGE 65 Volts CURRENT 225 mWatts FEATURES • Electrically-Isolated Complimentary Transistor Pairs • In

65 V, 100 mA NPN general-purpose transistors

Features and benefits • General-purpose transistors • SMD plastic packages • Two different gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

65 V, 100 mA NPN general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm

65 V, 100 mA PNP general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm

65 V, 100 mA NPN general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recommended for use in automotive a

65 V, 100 mA PNP general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recommended for use in automotive a

65 V, 100 mA NPN general-purpose transistor

Features and benefits • High power dissipation capability • High voltage (max. 65 V) • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • AEC-Q101 qualified

65 V, 100 mA PNP general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm

65 V, 100 mA NPN general-purpose transistor

Features and benefits • High power dissipation capability • High voltage (max. 65 V) • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recomme

65 V, 100 mA PNP general-purpose transistor

Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recommended for use in automotive a

NPN general purpose Transistor

FEATURES ● High current gain. ● Excellent hFE linearity . ● Low noise between 30Hz and 15kHz. ● For AF input stages and driver applications. APPLICATIONS ● General purpose switching and amplification.

NPN Plastic Encapsulate Transistor

FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 65 Volts CURRENT 150 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives

DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • For Switching and AF Amplifier Applications • Complementary PNP Type Available (BC856AS) • Lead Free/RoHS Compliant (Note 1) • Green Device (Note 4 and 5)

DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • For Switching and AF Amplifier Applications • Complementary PNP Type Available (BC856AS) • Lead Free/RoHS Compliant (Note 1) • Green Device (Note 4 and 5)

Suitable for automatic insertion in thick and thin-film circuits

DESCRIPTION The UTC BC846AS is a dual NPN surface mount small signal transistor, it uses UTC’s advanced technology to provide customers with high DC current gain, etc. The UTC BC846AS is suitable for switching and AF amplifier applications. FEATURES * Suitable for automatic insertion in thick

65V DUAL NPN SMALL SIGNAL TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 65V • IC = 100mA High Collector Current • Complementary PNP Types Available (BC856ASQ) • Ideally Suited for Automatic Insertion • For Switching an

65V DUAL NPN SMALL SIGNAL TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 65V • IC = 100mA High Collector Current • Complementary PNP Types Available (BC856ASQ) • Ideally Suited for Automatic Insertion • For Switching an

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856T, BC857T, BC858T, BC859T, BC860T

NPN general purpose transistors

DESCRIPTION NPN transistor in an SC-75 plastic package. PNP complements: BC856T and BC857T. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, especially in portable communication equipment • Electronic data proce

NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon Pb Lead(Pb)-Free

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856W – BC858W • For Switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856W, BC857W, BC858W, BC859W, BC860W (PNP)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Plastic Encapsulate Transistor

FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

NPN General Purpose Transistor

■ Features ● Low current (max. 100 mA). ● Low voltage (max. 65 V).

NPN GENERAL PURPOSE TRANSISTORS

FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types Available (BC856W-BC858W) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

NPN General Purpose Transistors

Features • Low current (max. 100mA) • Low voltage (max. 65V) • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

TRANSISTOR (NPN)

FEATURES ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications

Plastic-Encapsulate Transistors

FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Switching and Amplification.

NPN Transistor

FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free)

GENERAL PURPOSE TRANSISTOR NPN SILICON

DESCRIPTION The BC846AW~BC848CW are available in SC-70 Package. FEATURES  Available in SC-70 Package

65 V, 100 mA NPN general-purpose transistors

Features and benefits • General-purpose transistors • SMD plastic package • Two different gain selections

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary PNP Types Available (BC856W-BC858W) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)