BC846A_价格
参考价格:¥0.0394
型号:BC846A,215 品牌:NXP 备注:这里有BC846A_多少钱,2026年最近7天走势,今日出价,今日竞价,BC846A_批发/采购报价,BC846A_行情走势销售排行榜,BC846A_报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BC846A_ | NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • Complementary PNP Types Available (BC856-BC858) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability | DIODES 美台半导体 | ||
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856 – BC858 • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for H | DIODES 美台半导体 | |||
丝印代码:4AT;Plastic-Encapsulate Transistors FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors | GWSEMI 唯圣电子 | |||
NPN Silicon AF Transistors NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC857...-BC860...(PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011) | INFINEON 英飞凌 | |||
NPN general purpose transistors DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching | PHILIPS 飞利浦 | |||
Small Signal Transistor Features - Power dissipation PCM: 0.20W (@TA=25 °C) - Collector current ICM: 0.1A - Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V - Operating and storage junction temperature range: TJ, TSTG= -65 to +150 °C | COMCHIP 典琦 | |||
General Purpose Transistor Features - High current gain. - Excellent hFE linearity. - Low noise between 30Hz and 15Hz. - For AF input stages and driver applications. | COMCHIP 典琦 | |||
GENERAL PURPOSE TRANSISTORS NPN SILICON DESCRIPTION The BC846 AL /BL A 8 4 7 8 4 8 A L / CL are available in SOT 23 p ackage. FEATURES ⚫ H ig h current gain ⚫ E xcellent h FE linearity ⚫ L ow noise between 30Hz and 15k H z ⚫ F or A F input stages and driver applications ⚫ Availabl e in SOT 23 p ackage A PPL ICATIONS ⚫ G e | AITSEMI 创瑞科技 | |||
General Purpose Transistors General Purpose Transistors NPN Silicon | ETL 亚历电子 | |||
General Purpose Transistors(NPN Silicon) General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V | ONSEMI 安森美半导体 | |||
General Purpose Transistors General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q | ONSEMI 安森美半导体 | |||
General Purpose Transistors(NPN Silicon) General Purpose Transistors NPN Silicon | LRC 乐山无线电 | |||
CASE 318-08, STYLE 6 SOT-23 (TO-236AB) General Purpose Transistors NPN Silicon | MOTOROLA 摩托罗拉 | |||
CASE 318-08, STYLE 6 SOT-23 (TO-236AB) General Purpose Transistors NPN Silicon | MOTOROLA 摩托罗拉 | |||
CASE 318-08, STYLE 6 SOT-23 (TO-236AB) General Purpose Transistors NPN Silicon | MOTOROLA 摩托罗拉 | |||
General Purpose Transistors General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q | ONSEMI 安森美半导体 | |||
CASE 318-08, STYLE 6 SOT-23 (TO-236AB) General Purpose Transistors NPN Silicon | MOTOROLA 摩托罗拉 | |||
General Purpose Transistors General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q | ONSEMI 安森美半导体 | |||
General Purpose Transistors General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q | ONSEMI 安森美半导体 | |||
CASE 318-08, STYLE 6 SOT-23 (TO-236AB) General Purpose Transistors NPN Silicon | MOTOROLA 摩托罗拉 | |||
General Purpose Transistors(NPN Silicon) General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V | ONSEMI 安森美半导体 | |||
General Purpose Transistors General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q | ONSEMI 安森美半导体 | |||
General Purpose Transistors General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q | ONSEMI 安森美半导体 | |||
丝印代码:8AA;NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 ... BC860 | FAIRCHILD 仙童半导体 | |||
DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimently pair (NPN and PNP) general-purpose transisotrs.This device is ideal for portable applications where board space is at a premium VOLTAGE 65 Volts CURRENT 225 mWatts FEATURES • Electrically-Isolated Complimentary Transistor Pairs • In | PANJIT 強茂 | |||
丝印代码:1A;65 V, 100 mA NPN general-purpose transistors Features and benefits • General-purpose transistors • SMD plastic packages • Two different gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications | NEXPERIA 安世 | |||
丝印代码:F2;65 V, 100 mA NPN general-purpose transistor Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm | NEXPERIA 安世 | |||
65 V, 100 mA PNP general-purpose transistor Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm | NEXPERIA 安世 | |||
丝印代码:F2;65 V, 100 mA NPN general-purpose transistor Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recommended for use in automotive a | NEXPERIA 安世 | |||
65 V, 100 mA PNP general-purpose transistor Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recommended for use in automotive a | NEXPERIA 安世 | |||
丝印代码:9R;65 V, 100 mA NPN general-purpose transistor Features and benefits • High power dissipation capability • High voltage (max. 65 V) • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • AEC-Q101 qualified | NEXPERIA 安世 | |||
65 V, 100 mA PNP general-purpose transistor Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm | NEXPERIA 安世 | |||
丝印代码:9R;65 V, 100 mA NPN general-purpose transistor Features and benefits • High power dissipation capability • High voltage (max. 65 V) • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recomme | NEXPERIA 安世 | |||
65 V, 100 mA PNP general-purpose transistor Features and benefits • High power dissipation capability • Suitable for Automatic Optical Inspection (AOI) of solder joint • Smaller footprint compared to conventional leaded SMD packages • Low package height of 0.5 mm • Qualified according to AEC-Q101 and recommended for use in automotive a | NEXPERIA 安世 | |||
NPN Plastic Encapsulate Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications | SECOS 喜可士 | |||
丝印代码:1A;NPN general purpose Transistor FEATURES ● High current gain. ● Excellent hFE linearity . ● Low noise between 30Hz and 15kHz. ● For AF input stages and driver applications. APPLICATIONS ● General purpose switching and amplification. | LUGUANG 鲁光电子 | |||
NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 65 Volts CURRENT 150 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | |||
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • For Switching and AF Amplifier Applications • Complementary PNP Type Available (BC856AS) • Lead Free/RoHS Compliant (Note 1) • Green Device (Note 4 and 5) | DIODES 美台半导体 | |||
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • For Switching and AF Amplifier Applications • Complementary PNP Type Available (BC856AS) • Lead Free/RoHS Compliant (Note 1) • Green Device (Note 4 and 5) | DIODES 美台半导体 | |||
Suitable for automatic insertion in thick and thin-film circuits DESCRIPTION The UTC BC846AS is a dual NPN surface mount small signal transistor, it uses UTC’s advanced technology to provide customers with high DC current gain, etc. The UTC BC846AS is suitable for switching and AF amplifier applications. FEATURES * Suitable for automatic insertion in thick | UTC 友顺 | |||
65V DUAL NPN SMALL SIGNAL TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 65V • IC = 100mA High Collector Current • Complementary PNP Types Available (BC856ASQ) • Ideally Suited for Automatic Insertion • For Switching an | DIODES 美台半导体 | |||
65V DUAL NPN SMALL SIGNAL TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 65V • IC = 100mA High Collector Current • Complementary PNP Types Available (BC856ASQ) • Ideally Suited for Automatic Insertion • For Switching an | DIODES 美台半导体 | |||
丝印代码:1A;NPN general purpose transistors DESCRIPTION NPN transistor in an SC-75 plastic package. PNP complements: BC856T and BC857T. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, especially in portable communication equipment • Electronic data proce | PHILIPS 飞利浦 | |||
NPN Silicon AF Transistors NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856T, BC857T, BC858T, BC859T, BC860T | INFINEON 英飞凌 | |||
丝印代码:1A-;NPN general purpose transistors DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. | PHILIPS 飞利浦 | |||
NPN Silicon AF Transistors NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856W, BC857W, BC858W, BC859W, BC860W (PNP) | INFINEON 英飞凌 | |||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Switching and Amplification. | CDIL | |||
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • Ideally Suited for Automatic Insertion • Complementary PNP Types: BC856W – BC858W • For Switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101 Standards for | DIODES 美台半导体 | |||
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Ideally Suited for Automatic Insertion • Complementary PNP Types Available (BC856W-BC858W) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5) | DIODES 美台半导体 | |||
Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | DIOTEC 德欧泰克 | |||
NPN General Purpose Transistors Features • Low current (max. 100mA) • Low voltage (max. 65V) • Case Material:Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 | MCC | |||
General Purpose Transistor NPN Silicon General Purpose Transistor NPN Silicon Pb Lead(Pb)-Free | WEITRON | |||
NPN Transistor FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free) | TSC 台湾半导体 | |||
NPN General Purpose Transistor ■ Features ● Low current (max. 100 mA). ● Low voltage (max. 65 V). | KEXIN 科信电子 | |||
NPN GENERAL PURPOSE TRANSISTORS FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above | PANJIT 強茂 | |||
TRANSISTOR (NPN) FEATURES ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications | WINNERJOIN 永而佳 | |||
丝印代码:1A;65 V, 100 mA NPN general-purpose transistors Features and benefits • General-purpose transistors • SMD plastic package • Two different gain selections | NEXPERIA 安世 | |||
NPN Plastic Encapsulate Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications | SECOS 喜可士 | |||
Plastic-Encapsulate Transistors FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications | HOTTECH 合科泰 | |||
GENERAL PURPOSE TRANSISTOR NPN SILICON DESCRIPTION The BC846AW~BC848CW are available in SC-70 Package. FEATURES Available in SC-70 Package | AITSEMI 创瑞科技 |
BC846A_产品属性
- 类型
描述
- ICEO(V):
65.00
- HFE Min/Max:
110/220
- IC(mA)/VCE:
2/5
- VCE(sat)Max(Volts):
0.25
- VCE(sat)IC/Ib(mA):
10/0.5
- FtTYP(MHz):
100
- Polarity:
E
- Package:
SC-88
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
YANGJIE/扬杰科技 |
24+ |
SOT-23 |
9000 |
只做原装真实库存13714450367 |
|||
Nexperia(安世) |
25+ |
SC-70 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ON |
24+ |
SOT23 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
YANGJIE/扬杰科技 |
25+ |
SOT-23 |
32000 |
YANGJIE/扬杰科技全新特价BC846A-F2-0000HF即刻询购立享优惠#长期有货 |
|||
ON(安森美) |
23+ |
SOT-23(SOT-23-3) |
13132 |
公司只做原装正品,假一赔十 |
|||
ON |
22+ |
3000 |
ON代理分销,价格优势现货假一罚十 |
||||
ON |
23+ |
SOT23 |
65400 |
||||
ON |
15+ |
原厂原装 |
999999 |
进口原装现货假一赔十 |
|||
ON(安森美) |
24+ |
N/A |
12980 |
原装正品现货支持实单 |
|||
DIODES/美台 |
2025+ |
SMD |
5000 |
原装进口价格优 请找坤融电子! |
BC846A_规格书下载地址
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製造商: ON Semiconductor 產品類型: 雙極結晶體管 - BJT RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: SOT-23-3 晶體管極性: NPN 配置: Single 集電極-發射極最大電壓VCEO: 65 V 集電極-基極電壓VCBO: 80 V 發射機-基極電壓VEBO: 6 V 集電極-發射極飽和電壓: 0.6 V 集電極最大直流電流: 0.1 A P
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深圳市顺德利科技有限公司 0755-82725660 18128853661(微信75056055) QQ:782954141
2019-6-18
DdatasheetPDF页码索引
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