Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

PNP General Purpose Amplifier

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

PNP general purpose transistor

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC817. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

PNP SURFACE MOUNT TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● Complementary NPN Types Available (BC817) ● For switching and AF Amplifier Applications ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. Green Device (Note 3)

PNP SURFACE MOUNT TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● Complementary NPN Types Available (BC817) ● For switching and AF Amplifier Applications ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. Green Device (Note 3)

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Silicon General Purpose Transistors

Features • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 50V • Operating and storage junction temperature range: -55O C to +150O C • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

PNP Silicon General Purpose Transistors

Features • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 50V • Operating and storage junction temperature range: -55O C to +150O C • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

PNP General Purpose Amplifier

Features: •For general AF applications •Complementary NPN type available BC817 •High collector current •High current gain •Low collector-emitter saturation voltage

0.3 Watts PNP Plastic-Encapsulate Transistors

Features — Ideally suited for automatic insertion — Epitaxial planar die construction — For switching, AF driver and amplifier applications — Complementary NPN type available(BC817) — Qualified to AEC-Q101 standards for high reliability Mechanical Data — Case: SOT-23, Molded

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon P/b Lead(Pb)-Free

PNP General Purpose Amplifier

FEATURES Ideally suited for automatic insertion. Complementary NPN type available BC817 Epitaxial planar die construction. APPLICATIONS This device is designed for general purpose amplifier and switching applications at currents to1.0A.

Small Signal Transistors (PNP)

Features • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. • As c

TRANSISTOR (PNP)

FEATURES ·Ldeally suited for automatic insertion ·epitaxial planar die construction ·complementary NPN type available(BC817)

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE 45 Volts POWER 225 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • Collector current IC = 500mA • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request MECHANICAL DATA Case: SOT-2

PNP Plastic Encapsulate Transistor

FEATURES Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817 (NPN Type) MARKING BC807-16:5A; BC807-25:5B; BC807-40:5C

PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

●For general AF applications ●High collector current ●High current gain ●Low collector-emitter saturation voltage ●Complementary types: BC 817, BC 818 (NPN)

PNP SURFACE MOUNT TRANSISTOR

Features 310mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available(BC817)

45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections

45 V, 500 mA NPN general-purpose transistors

Features and benefits • High current • Three current gain selections

Ldeally suited for automatic insertion

FEATURES ·Ldeally suited for automatic insertion ·epitaxial planar die construction ·complementary NPN type available(BC817)

PNP SURFACE MOUNT TRANSISTOR

Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available (BC817)

Plastic-Encapsulate Transistors

文件：193.72 Kbytes Page：2 Pages

Plastic-Encapsulate Transistors

文件：591.4 Kbytes Page：2 Pages

PNP Low Frequency Amplifier Transistor

文件：349.85 Kbytes Page：3 Pages

General Purpose Transistors

文件：619.35 Kbytes Page：3 Pages

Plastic Encapsulate Transistors

文件：427.46 Kbytes Page：2 Pages

PNP General Purpose Amplifier

文件：1.09504 Mbytes Page：2 Pages

Ldeally suited for automatic insertion

文件：113.81 Kbytes Page：2 Pages

TRANSISTOR (PNP)

文件：1.15455 Mbytes Page：3 Pages

PNP GENERAL PURPOSE TRANSISTORS

文件：110.56 Kbytes Page：3 Pages

General Purpose Transistor

文件：343.5 Kbytes Page：4 Pages

PNP SILICON GENERAL PURPOSE TRANSISTORS

文件：870.7 Kbytes Page：3 Pages

Plastic-Encapsulated Multiple Transistors ??Quad Surface Mount (Case 751B-SO-16) ??NPN/PNP)

文件：53.1 Kbytes Page：1 Pages

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件：402.87 Kbytes Page：3 Pages

0.3 Walts, PNP Plastic-Encasulate Transistor

文件：340.11 Kbytes Page：2 Pages

0.3 Watts, PNP Plastic-Encasulate Transistor

文件：153.31 Kbytes Page：5 Pages

PNP Silicon General Purpose Transistors

文件：331.19 Kbytes Page：3 Pages

PNP Silicon AF Transistor

文件：111.91 Kbytes Page：11 Pages

Surface Mount General Purpose

文件：109.24 Kbytes Page：2 Pages

45 V, 500 mA PNP general-purpose transistors

文件：242.05 Kbytes Page：19 Pages

PNP Transistors

文件：1.38356 Mbytes Page：2 Pages

General Purpose Transistors PNP Silicon

文件：902.86 Kbytes Page：10 Pages

45 V, 500 mA PNP general-purpose transistors

PNP SURFACE MOUNT TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● Complementary NPN Types Available (BC817) ● For switching and AF Amplifier Applications ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. Green Device (Note 3)

PNP SURFACE MOUNT TRANSISTOR

Features ● Ideally Suited for Automatic Insertion ● Epitaxial Planar Die Construction ● Complementary NPN Types Available (BC817) ● For switching and AF Amplifier Applications ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. Green Device (Note 3)

Silicon PNP General Purpose Transistors

Features  Silicon PNP Epitaxial type  Excellent DC current gain characteristics  General purpose amplifier application  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: BC817-AU series

Silicon PNP General Purpose Transistors

Features  Silicon PNP Epitaxial type  Excellent DC current gain characteristics  General purpose amplifier application  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: BC817-AU series

45 V, 500 mA PNP general-purpose transistors

Features and benefits Three current gain selections High-temperature applications up to 175 °C AEC-Q101 qualified

45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • AEC-Q101 qualified

GENERAL PURPOSE TRANSISTORS

DESCRIPTION PNP Silicon The BC807-16L、BC807-25L and BC807-40L are available in S OT 23 p a ckage FEATURES  Collector current capability IC = -500mA.  Collector-emitter voltage VCEO(MAX) = -45 V  General purpose switching and amplification  Availabl e in S OT 23 p ackage

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

General Purpose Transistors

General Purpose Transistors PNP Silicon

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

General Purpose Transistors

General Purpose Transistors PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

45 V, 500 mA PNP general-purpose transistors

Features and benefits • High current • Three current gain selections • AEC-Q101 qualified